Fully symmetric vertical hall devices in CMOS technology

Proceedings of IEEE Sensors

Volumn , Issue , 2013, Pages

  Sander, C ^a   Raz, R ^a   Ruther, P ^a   Paul, O ^a   Kaufmann, T ^b   Cornils, M ^b   Vecchi, M C ^b  

^a UNIVERSITY OF FREIBURG   (Germany)

^b Micronas GmbH Freiburg   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; HALL EFFECT TRANSDUCERS; SENSORS;

CMOS TECHNOLOGY; CURRENT SWITCHING; DEGREE OF SYMMETRY; IN-PLANE MAGNETIC FIELDS; JUNCTION FIELD EFFECTS; NOVEL DEVICES; STANDARD DEVIATION; VERTICAL HALL SENSORS;

ELECTRIC FIELD EFFECTS;

EID: 84893947704     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSENS.2013.6688286     Document Type: Conference Paper

References (10)

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