Epitaxial growth of Au on Ge(001) surface: Photoelectron spectroscopy measurements and first-principles calculations

Thin Solid Films

Volumn 552, Issue , 2014, Pages 241-249

  Popescu, Dana G ^a   Husanu, Marius A ^a  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

Angle resolved photoelectron spectroscopy; Band bending; Epitaxial growth; First principles calculations; X ray photoelectron spectroscopy

Indexed keywords

AB INITIO CALCULATIONS; ANGLE RESOLVED PHOTOELECTRON SPECTROSCOPY; AU GROWTH; AU LAYERS; BANDBENDING; CRYSTALLINE DOMAINS; FIRST-PRINCIPLES CALCULATION; GE SURFACES;

ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; GERMANIUM; GOLD; LOW ENERGY ELECTRON DIFFRACTION; PHOTOELECTRONS; X RAY PHOTOELECTRON SPECTROSCOPY;

CALCULATIONS;

EID: 84892806584     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2013.12.049     Document Type: Article

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