Junction formation in chalcopyrite solar cells by sputtered wide gap compound semiconductors

Thin Solid Films

Volumn 520, Issue 4, 2011, Pages 1330-1333

  Grimm, A ^a   Kieven, D ^a   Klenk, R ^a   Lauermann, I ^a   Neisser, A ^b   Niesen, T ^c   Palm, J ^c  

^a HAHN MEITNER INSTITUT   (Germany)

^b Sulfurcell Solartechnik GmbH   (Germany)

^c AVANCIS GMBH   (Germany)

Author keywords

Cd free buffer; Chalcopyrite thin film solar cells; Heterojunction; Sputtering; TCO

Indexed keywords

CD-FREE BUFFER; CHALCOPYRITE SOLAR CELLS; COMPOUND SEMICONDUCTORS; JUNCTION FORMATION; LOW BAND GAP; OXYGEN PARTIAL PRESSURE; PREPARATION PROCESS; STRUCTURAL AND OPTICAL PROPERTIES; SULPHUR CONTENT; TCO; THIN-FILM SOLAR CELLS; WIDE BAND GAP; WIDE GAP; ZN(O ,S);

BUFFER LAYERS; CADMIUM COMPOUNDS; CADMIUM SULFIDE; COPPER COMPOUNDS; ENERGY GAP; HETEROJUNCTIONS; OPEN CIRCUIT VOLTAGE; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; SPUTTERING; SULFUR;

SOLAR ABSORBERS;

EID: 82755189620     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.04.150     Document Type: Conference Paper

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