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Volumn 122, Issue 1421, 2014, Pages 96-103

Difference of the responses between SnO2 and ZnO to reducing gases at 300°C and below via optical and electrical approaches

(5) Matsushima, Yuta a Toyoda, Ryosuke a Mori Ai, Hiroki a Kondo, Atsushi b Maeda, Kazuyuki b

a YAMAGATA UNIVERSITY (Japan)

b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY (Japan)

Author keywords

Defect; Gas sensor; Optical absorption; Oxygen vacancy; Semiconductive oxide; ZnO

Indexed keywords

ABSORPTION SPECTROSCOPY; ALUMINUM; CHEMICAL SENSORS; CONDUCTIVE FILMS; DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC VARIABLES MEASUREMENT; ELECTROMAGNETIC WAVE ABSORPTION; ENERGY GAP; HALL EFFECT; HALL MOBILITY; LIGHT ABSORPTION; METALLIC FILMS; OXYGEN VACANCIES; SEMICONDUCTOR DOPING; VACANCIES; ZINC OXIDE;

AL-DOPED ZNO FILMS; CARRIER-CONCENTRATION DEPENDENCE; DEFECT LEVELS; HALL EFFECT MEASUREMENT; REDUCING TREATMENT; SEMICONDUCTIVE; TREATMENT TEMPERATURE; TWO-COMPONENT;

CARRIER CONCENTRATION;

EID: 84892724411 PISSN: 18820743 EISSN: 13486535 Source Type: Journal
DOI: 10.2109/jcersj2.122.96 Document Type: Article

Times cited : (4)

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