Characteristics of photocurrent generation in the near-ultraviolet region in Si quantum-dot sensitized solar cells

Thin Solid Films

Volumn 544, Issue , 2013, Pages 93-98

  Uchida, Giichiro ^a   Sato, Muneharu ^a   Seo, Hyunwoong ^a   Kamataki, Kunihiro ^a   Itagaki, Naho ^a,b   Koga, Kazunori ^a   Shiratani, Masaharu ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Multiple exciton generation; Quantum dot sensitized solar cell; Si nanoparticle

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEPOSITION; ELECTRIC DISCHARGES; ENERGY GAP; EXCITONS; IRRADIATION; NANOCRYSTALS; NANOPARTICLES; PLASMA CVD; SEMICONDUCTOR QUANTUM DOTS; SILICON; SOLAR CELLS; THIN FILMS;

INCIDENT PHOTON-TO-CURRENT CONVERSION EFFICIENCIES; MULTIPLE EXCITON GENERATIONS; NEAR-ULTRAVIOLET REGIONS; OPTICAL BAND GAP ENERGY; PHOTOCURRENT GENERATIONS; QUANTUM DOT-SENSITIZED SOLAR CELLS; SENSITIZED SOLAR CELLS; SI NANOPARTICLES;

SILICON SOLAR CELLS;

EID: 84892416712     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2013.04.111     Document Type: Conference Paper

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