Raman spectroscopy of bismuth silicon oxide single crystals grown by the Czochralski technique

Physica Scripta

Volumn T157, Issue , 2013, Pages

  Lazarevic Z ^a   Kostic S ^a   Radojevic V ^a   Romcevic M ^a   Gilic M ^a   Petrovic Damjanovic M ^a   Romcevic N ^a  

^a UNIVERSITY OF BELGRADE   (Serbia)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH SILICON OXIDE; CRITICAL DIAMETER; CRITICAL RATES; CZOCHRALSKI TECHNIQUE; ETCHING SOLUTIONS; GROWTH CONDITIONS; SPECTROSCOPIC MEASUREMENTS;

BISMUTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OPTICAL MATERIALS; SILICON OXIDES; X RAY DIFFRACTION;

SINGLE CRYSTALS;

EID: 84891866285     PISSN: 02811847     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1088/0031-8949/2013/T157/014046     Document Type: Conference Paper

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