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Volumn 64, Issue 9, 1999, Pages 553-561

Single crystals of bismuth silicon oxide grown by the Czochralski technique and their characterisation

Author keywords

Bismuth silicon oxide single crystals; Ciritical rate of rotation; Critical diameter; Czochralski technique; Etching solution; Optical properties

Indexed keywords


EID: 0033438164     PISSN: 03525139     EISSN: None     Source Type: Journal    
DOI: 10.2298/jsc9909553g     Document Type: Article
Times cited : (12)

References (24)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.