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Volumn 198-199, Issue PART I, 1999, Pages 476-481

A study of the growth mechanism of bismuth silicon oxide during LHPG method

Author keywords

Bi12SiO20; Crystal; Fibers; LHPG; Thermal radiation; Two pass

Indexed keywords

BISMUTH COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALLIZATION; FIBERS; HEAT RADIATION; INFRARED IMAGING; LASER APPLICATIONS; SINGLE CRYSTALS;

EID: 0033514690     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01142-7     Document Type: Article
Times cited : (15)

References (12)
  • 6
    • 3643115233 scopus 로고
    • Illinois Institute of Technology, Chicago, IL
    • D.E. Todd, C.L. Carter, Proc. American Power Conf., Illinois Institute of Technology, Chicago, IL, 1987, vol. 1088, p. 440.
    • (1987) Proc. American Power Conf. , vol.1088 , pp. 440
    • Todd, D.E.1    Carter, C.L.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.