Accelerated degradation of Al3+ doped ZnO thin films using damp heat test

Organic Electronics

Volumn 15, Issue 2, 2014, Pages 569-576

  Litzov, Ivan ^a   Azimi, Hamed ^a   Matt, Gebhard ^a   Kubis, Peter ^a   Stubhan, Tobias ^a   Popov, Georgi ^a   Brabec, Christoph J ^a,b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b BAVARIAN CENTER FOR APPLIED ENERGY RESEARCH ZAE BAYERN   (Germany)

Author keywords

Aluminum doped zinc oxide; Conductivity; Damp heat test; Work function

Indexed keywords

ALUMINUM OXIDE; ELECTRIC CONDUCTIVITY; ENERGY GAP; II-VI SEMICONDUCTORS; INTERFACES (MATERIALS); METALS; MOISTURE; MOS DEVICES; OPTICAL FILMS; OPTICAL PROPERTIES; OXIDE SEMICONDUCTORS; SOL-GELS; TRANSPARENT CONDUCTING OXIDES; WIDE BAND GAP SEMICONDUCTORS; WORK FUNCTION; ZINC OXIDE;

ABSORPTION CO-EFFICIENT; ACCELERATED DEGRADATION; ALUMINUM-DOPED ZINC OXIDE; DAMP HEAT; DAMP-HEAT EXPOSURE; DOPED ZNO THIN FILMS; METAL-OXIDE-SEMICONDUCTOR INTERFACES; OPTICAL AND ELECTRICAL PROPERTIES;

THIN FILMS;

EID: 84891691450     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2013.12.001     Document Type: Article

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