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Volumn 49, Issue 1, 2014, Pages 202-211

A 3.4-pj feram-enabled d flip-flop in 0.13-μm CMOS for nonvolatile processing in digital systems

Author keywords

Digital electronics; Embedded systems; Energy harvesting; Ferroelectric random access memory (FeRAM); Latches; Low power electronics; Nonvolatile memory; Registers

Indexed keywords

DIGITAL ELECTRONICS; EMBEDDED SYSTEM APPLICATIONS; ENERGY AVAILABILITY; FERROELECTRIC CAPACITORS; FERROELECTRIC RANDOM ACCESS MEMORY; NON-VOLATILE MEMORY; POWER MANAGEMENT UNIT; REGISTERS;

EID: 84891633749     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2013.2282112     Document Type: Article
Times cited : (48)

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    • S. Mutoh, T. Douseki, Y. Matsuya, T. Aoki, S. Shigematsu, and J. Yamada, "1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS," IEEE J. Solid-State Circuits, vol. 30, no. 8, pp. 847-854, Aug. 1995.
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  • 12
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.