-
1
-
-
79955731779
-
An 82 A MHz microcontroller with embedded FeRAM for energyharvesting applications
-
M. Zwerg, A. Baumann, R. Kuhn, M. Arnold, R. Nerlich, M. Herzog, R. Ledwa, C. Sichert, V. Rzehak, P. Thanigai, and B. O. Eversmann, "An 82 A MHz microcontroller with embedded FeRAM for energyharvesting applications," in IEEE Int. Solid-State Circuits Conf., 2011, pp. 334-335.
-
IEEE Int. Solid-State Circuits Conf., 2011
, pp. 334-335
-
-
Zwerg, M.1
Baumann, A.2
Kuhn, R.3
Arnold, M.4
Nerlich, R.5
Herzog, M.6
Ledwa, R.7
Sichert, C.8
Rzehak, V.9
Thanigai, P.10
Eversmann, B.O.11
-
2
-
-
79951560794
-
Scalable spin-transfer torque ram technology for normally-off computing
-
T. Kawahara, "Scalable spin-transfer torque ram technology for normally-off computing," IEEE Design Test of Comput., vol. 28, no. 1, pp. 52-63, 2011.
-
(2011)
IEEE Design Test of Comput.
, vol.28
, Issue.1
, pp. 52-63
-
-
Kawahara, T.1
-
3
-
-
84876532836
-
Nonvolatile logic-in-memory array processor in 90 nm MTJ/MOS achieving
-
M. Natsui, D. Suzuki, N. Sakimura, R. Nebashi, Y. Tsuji, A. Morioka, T. Sugibayashi, S. Miura, H. Honjo, K. Kinoshita, S. Ikeda, T. Endoh, H. Ohno, and T. Hanyu, "Nonvolatile logic-in-memory array processor in 90 nm MTJ/MOS achieving," in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, 2013, pp. 194-195.
-
(2013)
IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers
, pp. 194-195
-
-
Natsui, M.1
Suzuki, D.2
Sakimura, N.3
Nebashi, R.4
Tsuji, Y.5
Morioka, A.6
Sugibayashi, T.7
Miura, S.8
Honjo, H.9
Kinoshita, K.10
Ikeda, S.11
Endoh, T.12
Ohno, H.13
Hanyu, T.14
-
4
-
-
84872866440
-
A lowvoltage 1Mb FRAMin 0.13mCMOS featuring time-to-digital sensing for expanded operating margin
-
Jan.
-
M. Qazi, M. Clinton, S. Bartling, and A. P. Chandrakasan, "A lowvoltage 1Mb FRAMin 0.13mCMOS featuring time-to-digital sensing for expanded operating margin," IEEE J. Solid-State Circuits, vol. 47, no. 1, pp. 141-150, Jan. 2012.
-
(2012)
IEEE J. Solid-State Circuits
, vol.47
, Issue.1
, pp. 141-150
-
-
Qazi, M.1
Clinton, M.2
Bartling, S.3
Chandrakasan, A.P.4
-
5
-
-
0242443703
-
Design and applications of ferroelectric nonvolatile SRAM and flip-flop with unlimited read/program cycles and stable recall
-
S. Masui, W. Yokozeki, M. Oura, T. Ninomiya, K. Mukaida, Y. Takayama, and T. Teramoto, "Design and applications of ferroelectric nonvolatile SRAM and flip-flop with unlimited read/program cycles and stable recall," in Proc. IEEE Custom Integr. Circuits Conf., 2003, pp. 403-406.
-
(2003)
Proc. IEEE Custom Integr. Circuits Conf.
, pp. 403-406
-
-
Masui, S.1
Yokozeki, W.2
Oura, M.3
Ninomiya, T.4
Mukaida, K.5
Takayama, Y.6
Teramoto, T.7
-
7
-
-
84870772612
-
A3 s wakeup time nonvolatile processor based on ferroelectric flip-flops
-
Y. Wang, Y. Liu, S. Li, D. Zhang, B. Zhao, M.-F. Chiang, Y. Yan, B. Sai, and H. Yang, "A3 s wakeup time nonvolatile processor based on ferroelectric flip-flops," in Proc. IEEE Eur. Solid-State Circuits Conf., 2012.
-
(2012)
Proc. IEEE Eur. Solid-State Circuits Conf.
-
-
Wang, Y.1
Liu, Y.2
Li, S.3
Zhang, D.4
Zhao, B.5
Chiang, M.-F.6
Yan, Y.7
Sai, B.8
Yang, H.9
-
8
-
-
24344477523
-
Direct studies of domain switching dynamics in thin film ferroelectric capacitors
-
Aug.
-
A. Gruverman, B. Rodriguez, C. Dehoff, J. Waldrep, A. Kingon, R. Nemanich, and J. Cross, "Direct studies of domain switching dynamics in thin film ferroelectric capacitors," Appl. Phys. Lett., vol. 87, no. 8, Aug. 2005, Art. ID 082902.
-
(2005)
Appl. Phys. Lett.
, vol.87
, Issue.8
-
-
Gruverman, A.1
Rodriguez, B.2
Dehoff, C.3
Waldrep, J.4
Kingon, A.5
Nemanich, R.6
Cross, J.7
-
9
-
-
10444235431
-
A 64-Mb embedded FRAM utilizing a 130-nm 5LMCu/FSG logic process
-
Apr.
-
H. P. McAdams, R. Acklin,T. Blake, X.-H.Du, J. Eliason, J. Fong,W. F. Kraus, D. Liu, S. Madan, T. Moise, S. Natarajan, N. Qian, Y. Qiu, K. A. Remack, J. Rodriguez, J. Roscher, A. Seshadri, and S. R. Summerfelt, "A 64-Mb embedded FRAM utilizing a 130-nm 5LMCu/FSG logic process," IEEE J. Solid-State Circuits, vol. 39, no. 4, pp. 667-677, Apr. 2004.
-
(2004)
IEEE J. Solid-State Circuits
, vol.39
, Issue.4
, pp. 667-677
-
-
McAdams, H.P.1
Acklin, R.2
Blake, T.3
Du, X.-H.4
Eliason, J.5
Fong, J.6
Kraus, W.F.7
Liu, D.8
Madan, S.9
Moise, T.10
Natarajan, S.11
Qian, N.12
Qiu, Y.13
Remack, K.A.14
Rodriguez, J.15
Roscher, J.16
Seshadri, A.17
Summerfelt, S.R.18
-
10
-
-
84860694088
-
330 nA energy-harvesting charger with battery management for solar and thermoelectric energy harvesting
-
K. Kadirvel, Y. Ramadass, U. Lyles, J. Carpenter, A. Chandrakasan, and B. Lum-Shue-Chan, "330 nA energy-harvesting charger with battery management for solar and thermoelectric energy harvesting," in Proc. IEEE Int. Solid-State Circuits Conf., 2012, pp. 106-107.
-
(2012)
Proc. IEEE Int. Solid-State Circuits Conf.
, pp. 106-107
-
-
Kadirvel, K.1
Ramadass, Y.2
Lyles, U.3
Carpenter, J.4
Chandrakasan, A.5
Lum-Shue-Chan, B.6
-
11
-
-
0029359285
-
1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS
-
Aug.
-
S. Mutoh, T. Douseki, Y. Matsuya, T. Aoki, S. Shigematsu, and J. Yamada, "1-V power supply high-speed digital circuit technology with multithreshold-voltage CMOS," IEEE J. Solid-State Circuits, vol. 30, no. 8, pp. 847-854, Aug. 1995.
-
(1995)
IEEE J. Solid-State Circuits
, vol.30
, Issue.8
, pp. 847-854
-
-
Mutoh, S.1
Douseki, T.2
Matsuya, Y.3
Aoki, T.4
Shigematsu, S.5
Yamada, J.6
-
12
-
-
0031162017
-
A 1-V high-speed MTCMOS circuit scheme for power-down application circuits
-
PII S001892009703833X
-
S. Shigematsu, S. Mutoh, Y. Matsuya, Y. Tanabe, and J. Yamada, "A 1-v high-speed MTCMOS circuit scheme for power-down application circuits," IEEE J. Solid-State Circuits, vol. 32, no. 6, pp. 861-869, Jun. 1997. (Pubitemid 127571557)
-
(1997)
IEEE Journal of Solid-State Circuits
, vol.32
, Issue.6
, pp. 861-869
-
-
Shigematsu, S.1
Mutoh, S.2
Matsuya, Y.3
Tanabe, Y.4
Yamada, J.5
-
13
-
-
18244414879
-
Demonstration of a 4 Mb, high density ferroelectric memory embedded within a 130 nm, 5 LM Cu/FSG logic process
-
T. S. Moise, S. R. Summerfelt, H. McAdams, S. Aggarwal, K. R. Udayakumar, F. G. Celii, J. S. Martin, G. Xing, L. Hall, K. J. Taylor, T. Hurd, J. Rodriguez, K. Remack, M. D. Khan, K. Boku, G. Stacey, M. Yao, M. G. Albrecht, E. Zielinski, M. Thakre, S. Kuchimanchi, A. Thomas, B. McKee, J. Rickes, A.Wang, J. Grace, J. Fong, D. Lee, C. Pietrzyk, R. Lanham, S. R. Gilbert, D. Taylor, J. Amano, R. Bailey, F. Chu, G. Fox, S. Sun, and T. Davenport, "Demonstration of a 4 Mb, high density ferroelectric memory embedded within a 130 nm, 5 LM Cu/FSG logic process," in Proc. IEEE Int. Electron Devices Meeting, 2002, pp. 535-538.
-
(2002)
Proc. IEEE Int. Electron Devices Meeting
, pp. 535-538
-
-
Moise, T.S.1
Summerfelt, S.R.2
McAdams, H.3
Aggarwal, S.4
Udayakumar, K.R.5
Celii, F.G.6
Martin, J.S.7
Xing, G.8
Hall, L.9
Taylor, K.J.10
Hurd, T.11
Rodriguez, J.12
Remack, K.13
Khan, M.D.14
Boku, K.15
Stacey, G.16
Yao, M.17
Albrecht, M.G.18
Zielinski, E.19
Thakre, M.20
Kuchimanchi, S.21
Thomas, A.22
McKee, B.23
Rickes, J.24
Wang, A.25
Grace, J.26
Fong, J.27
Lee, D.28
Pietrzyk, C.29
Lanham, R.30
Gilbert, S.R.31
Taylor, D.32
Amano, J.33
Bailey, R.34
Chu, F.35
Fox, G.36
Sun, S.37
Davenport, T.38
more..
-
14
-
-
51349099032
-
High-density 8 Mb 1T-1C ferroelectric random access memory embedded within a low-power 130 nm logic process
-
S. R. Summerfelt, T. S. Moise, K. R. Udayakumar, K. Boku, K. Remack, J. Rodriguez, J. Gertas, H. McAdams, S. Madan, J. Eliason, J. Groat, D. Kim, P. Staubs, M. Depner, and R. Bailey, "High-density 8 Mb 1T-1C ferroelectric random access memory embedded within a low-power 130 nm logic process," in Proc. IEEE Int. Symp. Applicat. Ferroelectrics, 2007, pp. 9-10.
-
(2007)
Proc. IEEE Int. Symp. Applicat. Ferroelectrics
, pp. 9-10
-
-
Summerfelt, S.R.1
Moise, T.S.2
Udayakumar, K.R.3
Boku, K.4
Remack, K.5
Rodriguez, J.6
Gertas, J.7
McAdams, H.8
Madan, S.9
Eliason, J.10
Groat, J.11
Kim, D.12
Staubs, P.13
Depner, M.14
Bailey, R.15
-
15
-
-
19944372371
-
Reliability properties of low-voltage ferroelectric capacitors and memory arrays
-
J. A. Rodriguez, K. Remack, K. Boku, K. R. Udayakumar, S. Aggarwal, S. R. Summerfelt, F. G. Celii, S. Martin, L. Hall, K. Taylor, T. Moise, H. McAdams, J. McPherson, R. Bailey, G. Fox, and M. Depner, "Reliability properties of low-voltage ferroelectric capacitors and memory arrays," IEEE Trans. Device Mater. Rel., vol. 4, no. 3, pp. 436-449, 2004.
-
(2004)
IEEE Trans. Device Mater. Rel.
, vol.4
, Issue.3
, pp. 436-449
-
-
Rodriguez, J.A.1
Remack, K.2
Boku, K.3
Udayakumar, K.R.4
Aggarwal, S.5
Summerfelt, S.R.6
Celii, F.G.7
Martin, S.8
Hall, L.9
Taylor, K.10
Moise, T.11
McAdams, H.12
McPherson, J.13
Bailey, R.14
Fox, G.15
Depner, M.16
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