Radical-assisted chemical doping for chemically derived graphene

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages 1-7

  Ishikawa, Ryousuke ^a   Ko, Pil Ju ^a,b   Bando, Masashi ^a   Kurokawa, Yasuyoshi ^a   Sandhu, Adarsh ^a,b   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Carrier doping; Charge transfer; Chemically derived graphene; First principles calculation; Radicalized organic conductors; Transparent conductive films

Indexed keywords

CALCULATIONS; CHARGE TRANSFER; CONDUCTIVE FILMS; GRAPHENE; MOLECULES; SPECTROSCOPIC ANALYSIS;

ALL-WET FABRICATION PROCESS; CARRIER DOPING; CHARGE TRANSFER INTERACTION; CHEMICALLY DERIVED GRAPHENE; CONJUGATED ORGANIC MOLECULES; FIRST-PRINCIPLES CALCULATION; SPECTROSCOPIC STUDIES; TRANSPARENT CONDUCTIVE FILMS;

SEMICONDUCTOR DOPING;

EID: 84891410315     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-534     Document Type: Article

References (39)

1. Novoselov KS, Geim AK, Morozov SV, Jiang D, Zhang Y, Dubonos SV, Grigorieva IV, Firsov AA: Electric field effect in atomically thin carbon films. Science 2004, 306:666-669.
2. Berger C, Song ZM, Li TB, Li XB, Ogbazghi AY, Feng R, Dai Z, Marchenkov AN, Conrad EH, First PN, de Heer WA: Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics. J Phys Chem B 2004, 108:19912-19916.
3. Zhang YB, Tan YW, Stormer HL, Kim P: Experimental observation of the quantum Hall effect and Berry's phase in graphene. Nature 2005, 438:201-204.
4. Geim AK, Novoselov KS: The rise of graphene. Nat Mater 2007, 6:183-191.
5. Ishikawa R, Bando M, Wada H, Kurokawa Y, Sandhu A, Konagai M: Layer-bylayer assembled transparent conductive graphene films for silicon thinfilm solar cells. Jpn J Appl Phys 2012, 51:11PF01.
6. Bolotin KI, Sikes KJ, Jiang Z, Klima M, Fudenberg G, Hone J, Kim P, Stormer HL: Ultrahigh electron mobility in suspended graphene. Solid State Commun 2008, 146:351-355.
7. Becerril HA, Mao J, Liu Z, Stoltenberg RM, Bao Z, Chen Y: Evaluation of solution-processed reduced graphene oxide films as transparent conductors. ACS Nano 2008, 2:463-470.
8. Yamaguchi H, Eda G, Mattevi C, Kim H, Chhowalla M: Highly uniform 300 mm wafer-scale deposition of single and multilayered chemically derived graphene thin films. ACS Nano 2010, 4:524-528.
9. Stankovich S, Dikin DA, Dommett GHB, Kohlhaas KM, Zimney EJ, Stach EA, Piner RD, Nguyen ST, Ruoff RS: Graphene-based composite materials. Nature 2006, 442:282-286.
10. Chun-Hua L, Huang-Hao Y, Chun-Ling Z, Xi C, Guo-Nan C: A graphene platform for sensing biomolecules. Angewandte 2009, 48:4785-4787.
11. Loh KP, Bao QL, Eda G, Chhowalla M: Graphene oxide as a chemically tunable platform for optical applications. Nat Chem 2010, 2:1015-1024.
12. Loh KP, Lu J, Yang JX, Wang JZ, Lim AL, Wang S: One-pot synthesis of fluorescent carbon nanoribbons, nanoparticles, and graphene by the exfoliation of graphite in ionic liquids. ACS Nano 2009, 3:2367-2375.
13. Eda G, Chhowalla M: Chemically derived graphene oxide: towards largearea thin-film electronics and optoelectronics. Adv Mater 2010, 22:2392-2415.
14. Huang JX, Kim J, Cote LJ, Kim F: Visualizing graphene based sheets by fluorescence quenching microscopy. J Am Chem Soc 2010, 132:260-267.
15. Wang XR, Li XL, Zhang L, Yoon Y, Weber PK, Wang HL, Guo J, Dai HJ: Ndoping of graphene through electrothermal reactions with ammonia. Science 2009, 324:768-771.
16. Wei DC, Liu YQ, Wang Y, Zhang HL, Huang LP, Yu G: Synthesis of N-doped graphene by chemical vapor deposition and its electrical properties. Nano Lett 2009, 9:1752-1758.
17. Chen JH, Jang C, Adam S, Fuhrer MS, Williams ED, Ishigami M: Chargedimpurity scattering in graphene. Nat Phys 2008, 4:377-381.
18. Wehling TO, Novoselov KS, Morozov SV, Vdovin EE, Katsnelson MI, Geim AK, Lichtenstein AI: Molecular doping of graphene. Nano Lett 2008, 8:173-177.
19. Lee YH, Kim KK, Reina A, Shi YM, Park H, Li LJ, Lee YH, Kong J: Enhancing the conductivity of transparent graphene films via doping. Nanotechnology 2010, 21:285205.
20. Khrapach I, Withers F, Bointon TH, Polyushkin DK, Barnes WL, Russo S, Craciun MF: Novel highly conductive and transparent graphene-based conductors. Adv Mater 2012, 24:2844-2849.
21. Blake P, Brimicombe PD, Nair RR, Booth TJ, Jiang D, Schedin F, Ponomarenko LA, Morozov SV, Gleeson HF, Hill EW, Geim AK, Novoselov KS: Graphene-based liquid crystal device. Nano Lett 2008, 8:1704-1708.
22. Tongay S, Berke K, Lemaitre M, Nasrollahi Z, Tanner DB, Hebard AF, Appleton BR: Stable hole doping of graphene for low electrical resistance and high optical transparency. Nanotechnology 2011, 22:425701.
23. Das B, Voggu R, Rout CS, Rao CNR: Changes in the electronic structure and properties of graphene induced by molecular charge-transfer. Chem Commun 2008, 41:5155-5157.
24. Subrahmanyam KS, Voggu R, Govindaraj A, Rao CNR: A comparative Raman study of the interaction of electron donor and acceptor molecules with graphene prepared by different methods. Chem Phys Lett 2009, 472:96-98.
25. Blochwitz J, Pfeiffer M, Fritz T, Leo K: Low voltage organic light emitting diodes featuring doped phthalocyanine as hole transport material. Appl Phys Lett 1998, 73:729-731.
26. Voggu R, Das B, Rout CS, Rao CNR: Effects of charge transfer interaction of graphene with electron donor and acceptor molecules examined using Raman spectroscopy and cognate techniques. J Phys-Condens Mat 2008, 20:472204.
27. Ishikawa R, Bando M, Morimoto Y, Sandhu A: Doping graphene films via chemically mediated charge transfer. Nanoscale Res Lett 2010, 6:111.
28. Soler JM, Artacho E, Gale JD, Garcia A, Junquera J, Ordejon P, Sánchez-Portal D: The SIESTA method for ab initio order-N materials simulation. J Phys-Condens Mat 2002, 14:2745-2779.
29. Perdew JP, Zunger A: Self-interaction correction to density-functional approximations for many-electron systems. Phys Rev B 1981, 23:5048-5079.
30. Kleinman L, Bylander DM: Efficacious form for model pseudopotentials. Phys Rev Lett 1982, 48:1425-1428.
31. Chen C, Iino M: Observation of the interaction of TCNQ with coal aromatics by UV-visible spectroscopy. Energy Fuels 1999, 13:1105-1106.
32. Yuge R, Yudasaka M, Maigne A, Tomonari M, Miyawaki J, Kubo Y, Imai H, Ichihashi T, Iijima S: Adsorption phenomena of tetracyano-pquinodimethane on single-wall carbon nanohorns. J Phys Chem C 2008, 112:5416-5422.
33. Chappell JS, Bloch AN, Bryden WA, Maxfield M, Poehler TO, Cowan DO: Degree of charge-transfer in organic conductors by infrared-absorption spectroscopy. J Am Chem Soc 1981, 103:2442-2443.
34. Coletti C, Riedl C, Lee DS, Krauss B, Patthey L, von Klitzing K, Smet JH, Starke U: Charge neutrality and band-gap tuning of epitaxial graphene on SiC by molecular doping. Phys Rev B 2010, 81:235401.
35. Lu YH, Chen W, Feng YP, He PM: Tuning the electronic structure of graphene by an organic molecule. J Phys Chem B 2009, 113:2-5.
36. de Parga ALV, Barja S, Garnica M, Hinarejos JJ, Martin N, Miranda R: Selforganization of electron acceptor molecules on graphene. Chem Commun 2010, 46:8198-8200.
37. Pinto H, Jones R, Goss JP, Briddon PR: Mechanisms of doping graphene. Physica Status Solidi a-Appl Mat Sci 2010, 207:2131-2136.
38. Chen W, Chen S, Qi DC, Gao XY, Wee ATS: Surface transfer p-type doping of epitaxial graphene. J Am Chem Soc 2007, 129:10418-10422.
39. Das A, Pisana S, Chakraborty B, Piscanec S, Saha SK, Waghmare UV, Novoselov KS, Krishnamurthy HR, Geim AK, Ferrari AC, Sood AK: Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor. Nat Nanotechnol 2008, 3:210-215.