Rearrangement of π-electron network and switching of edge-localized π state in reduced graphene oxide

ACS Nano

Volumn 7, Issue 12, 2013, Pages 11190-11199

  Fujii, Shintaro ^a   Enoki, Toshiaki ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

defect; density functional theory; electronic state; oxidized graphene; scanning probe microscopy

Indexed keywords

ELECTRON NETWORK; ELECTRONIC AND MAGNETIC PROPERTIES; ELECTRONIC DEVICE; FUTURE APPLICATIONS; GRAPHENE OXIDES; INTRINSIC ELECTRONICS; MECHANICAL FORCE; REDUCED GRAPHENE OXIDES;

BINDING ENERGY; DEFECTS; DENSITY FUNCTIONAL THEORY; ELECTRIC SWITCHES; ELECTRONIC STATES; ELECTRONIC STRUCTURE; OXIDATION; SCANNING PROBE MICROSCOPY;

GRAPHENE;

EID: 84891353311     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn404937z     Document Type: Article

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