A 65nm 4MB embedded flash macro for automotive achieving a read throughput of 5.7GB/s and a write throughput of 1.4MB/s

European Solid-State Circuits Conference

Volumn , Issue , 2013, Pages 193-196

  Jefremow, M ^a,b   Kern, T ^a   Backhausen, U ^a   Elbs, J ^a   Rousseau, B ^a   Roll, C ^a   Castro, L ^a   Roehr, T ^a   Paparisto, E ^a   Herfurth, K ^a   Bartenschlager, R ^a   Thierold, S ^a   Renardy, R ^a   Kassenetter, S ^a   Lawal, N ^a   Strasser, M ^a   Trottmann, W ^a   Schmitt Landsiedel, D ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOMOTIVE APPLICATIONS; EMBEDDED FLASH MEMORY; JUNCTION TEMPERATURES; MULTIPLEXER DESIGNS; SENSE AMPLIFIER; THROUGHPUT RATE; WRITE OPERATIONS; WRITE THROUGHPUTS;

FLASH MEMORY;

THROUGHPUT;

EID: 84891070740     PISSN: 19308833     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSCIRC.2013.6649105     Document Type: Conference Paper

References (7)

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