A 0.13μm 2.125MB 23.5ns embedded flash with 2GB/s read throughput for automotive microcontrollers

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2007, Pages 478-480

  Demi, Christoph ^a   Jankowski, Maciej ^a   Thalmaier, Carmen ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AUTOMOTIVE ENGINEERING; EMBEDDED SYSTEMS; LOGIC GATES; MICROCONTROLLERS; THROUGHPUT;

AUTOMOTIVE MICROCONTROLLERS; NOR ARCHITECTURE;

FLASH MEMORY;

EID: 34548820198     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2007.373502     Document Type: Conference Paper

References (4)

1. B. Wicht, Current Sense Amplifiers for Embedded SRAM in High-Performance System-on-a-Chip Designs, Springer, pp. 16-37, 2003.
2. D. Farene et al., "12ns Random Access Time in Pipeline Mode for High Performance Embedded FLASH Applications in a 0.13μm Technology," IEEE Nonvolatile Semiconductor Memory Workshop, pp. 67-68, Aug., 2004.
3. C. Demi et al., "Precharge Arrangement for Read Access for Integrated Nonvolatile Memories," United States Patent and Trademark Office, US 2005/0128813 A1, Jun. 16, 2005.
4. Freescale Semiconductor, "MPC5554 and MPC5553 Microcontroller Reference Manual," Rev. 3.1, Nov. 9, 2005.