Opto-structural and electrical properties of chemically grown Ga doped MoBi2Se5 thin films

Journal of Materials Science: Materials in Electronics

Volumn 24, Issue 12, 2013, Pages 4669-4676

  Patil, S V ^a,b   Mane, R M ^b   Pawar, N B ^b   Kharade, S D ^b   Mali, S S ^b   Patil, P S ^b,c   Agawane, G L ^c   Kim, J H ^c   Bhosale, P N ^b  

^a C T Bora College   (India)

^b SHIVAJI UNIVERSITY   (India)

^c Chonnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AS-DEPOSITED THIN FILMS; ELECTRICAL CONDUCTIVITY MEASUREMENTS; ENERGY DISPERSIVE X-RAY; ORGANO-METALLIC COMPLEXES; P TYPE CONDUCTIVITY; SCANNING ELECTRON MICROGRAPHS; SEMICONDUCTING BEHAVIOR; STOICHIOMETRIC RATIO;

ALKALINITY; ELECTRIC PROPERTIES; ETHANOLAMINES; GALLIUM; GALLIUM ALLOYS; MOLYBDENUM; MOLYBDENUM COMPOUNDS; ORGANOMETALLICS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SODIUM; THIN FILMS; TRIETHANOLAMINE; X RAY DIFFRACTION;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84890392393     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-013-1449-y     Document Type: Article

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