Synthesis and characterization of new quaternary MoBiInSe5 mixed metal chalcogenide thin films

Journal of Alloys and Compounds

Volumn 491, Issue 1-2, 2010, Pages 321-324

  Mane, R M ^a   Mane, S R ^a   Kharade, R R ^a   Bhosale, P N ^a  

^a SHIVAJI UNIVERSITY   (India)

Author keywords

APT; EDAX; SEM; TEP; Thin film; X ray diffraction

Indexed keywords

AS-DEPOSITED THIN FILMS; CHALCOGENIDE THIN FILMS; CHEMICAL COMPOSITIONS; COMPLEX FORMS; COMPLEXING AGENTS; COMPOSITIONAL ANALYSIS; CONCENTRATION OF; DC ELECTRICAL CONDUCTIVITY; GRAIN SIZE; METAL CHALCOGENIDE; MIXED-METALS; MORPHOLOGICAL STUDY; N-TYPE SEMICONDUCTORS; ORGANIC ADDITIVES; PRECIPITATION TECHNIQUES; SCANNING ELECTRON MICROSCOPES; SEM; SYNTHESIS AND CHARACTERIZATION; THIN FILM X-RAY DIFFRACTIONS; TRIETHANOLAMINES;

BISMUTH; DIFFRACTION; ELECTRIC CONDUCTIVITY; GRAIN REFINEMENT; GROWTH KINETICS; MOLYBDENUM; MOLYBDENUM COMPOUNDS; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SODIUM; THIN FILM DEVICES; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION;

X RAY DIFFRACTION ANALYSIS;

EID: 74449093841     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.10.159     Document Type: Article

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