Evidences of VO, VZn, and Oi defects as the green luminescence origins in ZnO

Applied Physics Letters

Volumn 103, Issue 23, 2013, Pages

  Lv, Jinpeng ^a,b   Li, Chundong ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b WASHINGTON STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT CENTERS; DEFECT CHARACTERIZATION; EXPERIMENTAL EVIDENCE; GREEN EMISSION PEAKS; GREEN LUMINESCENCE; INTRINSIC DEFECTS; RELATIVE CONCENTRATION; ZNO;

LUMINESCENCE; ZINC; ZINC OXIDE;

DEFECTS;

EID: 84889856157     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4844735     Document Type: Article

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37. See supplementary material at http://dx.doi.org/10.1063/1.4844735 E-APPLAB-103-043350 for more detailed descriptions of EPR and PL results recorded at both RT and low temperature.