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Volumn 65, Issue 12, 2002, Pages 1-10

Charge transport model for disordered materials: Application to sensitized (formula presented)

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Indexed keywords


EID: 84888615727     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.65.125324     Document Type: Article
Times cited : (9)

References (43)
  • 6
    • 85038328039 scopus 로고    scopus 로고
    • Laboratory for Photonics and Interfaces, Lausanne, Switzerland
    • Laboratory for Photonics and Interfaces, Lausanne, Switzerland, http://dcwww.epfl.ch/lpi/solarcellE.html
  • 26
    • 85038308857 scopus 로고    scopus 로고
    • This would correspond to the coordination number of the lattice in the case that we consider jumps between nearest neighbors only. Thus, for a simple cubic: (formula presented)
    • This would correspond to the coordination number of the lattice in the case that we consider jumps between nearest neighbors only. Thus, for a simple cubic: (formula presented)
  • 33
    • 0002917434 scopus 로고
    • Chapter 5 in Amorphous Semiconductors, topics in Applied Physics, edited by M. H. Brodsky (Springer-Verlag, Berlin
    • P. Nagels, Electronic Transport in Disordered Semiconductors, Chapter 5 in Amorphous Semiconductors, topics in Applied Physics, Vol. 36, edited by M. H. Brodsky (Springer-Verlag, Berlin, 1979).
    • (1979) Electronic Transport in Disordered Semiconductors , vol.36
    • Nagels, P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.