Analysis of effects of front and back surface dopants on silicon vertical multi-junction solar cell by 2D numerical simulation

Science China Technological Sciences

Volumn 56, Issue 11, 2013, Pages 2798-2807

  Xing, Yupeng ^a   Han, Peide ^a   Wang, Shuai ^a   Liang, Peng ^a   Lou, Shishu ^a   Zhang, Yuanbo ^a   Hu, Shaoxu ^a   Zhu, Huishi ^a   Mi, Yanhong ^a   Zhao, Chunhua ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

2D numerical simulation; concentration; doping profile; vertical junction

Indexed keywords

COMPUTER SOFTWARE; CONCENTRATION (PROCESS); ELECTRIC RESISTANCE; NUMERICAL MODELS; PASSIVATION; SILICON; SILICON SOLAR CELLS;

2-D NUMERICAL SIMULATION; DOPING PROFILES; HIGH-EFFICIENCY; RECOMBINATION VELOCITY; SERIES RESISTANCES; SURFACE EMITTERS; SURFACE PASSIVATION; VERTICAL JUNCTIONS;

MULTI-JUNCTION SOLAR CELLS;

EID: 84888166420     PISSN: 16747321     EISSN: 18691900     Source Type: Journal    
DOI: 10.1007/s11431-013-5378-z     Document Type: Article

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