Quantum efficiency and temperature coefficients of GaInP/GaAs dual-junction solar cell

Science in China, Series E: Technological Sciences

Volumn 52, Issue 5, 2009, Pages 1176-1180

  Liu, Lei ^a   Chen, Nuofu ^a,b   Bai, Yiming ^a   Cui, Ming ^a   Zhang, Han ^a   Gao, Fubao ^a   Yin, Zhigang ^a   Zhang, Xingwang ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF MECHANICS   (China)

Author keywords

Quantum efficiency; Solar cell; Temperature coefficient

Indexed keywords

CIRCUIT CELLS; DUAL JUNCTIONS; GAAS; GAINP; GAINP/GAAS; METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; RED-SHIFT PHENOMENON; SHORT-CIRCUIT CURRENT DENSITIES; SUB-CELLS; TEMPERATURE COEFFICIENT; TEMPERATURE RANGES; THEORETICAL EQUATIONS;

CHEMICAL VAPOR DEPOSITION; CONVERSION EFFICIENCY; GALLIUM ALLOYS; ION SENSITIVE FIELD EFFECT TRANSISTORS; PHOTOVOLTAIC CELLS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SOLAR CELLS; SOLAR ENERGY; SWITCHING CIRCUITS;

QUANTUM EFFICIENCY;

EID: 67349128951     PISSN: 10069321     EISSN: 1862281X     Source Type: Journal    
DOI: 10.1007/s11431-008-0203-9     Document Type: Article

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