Characteristics of ZnO thin films doped by various elements

Journal of Crystal Growth

Volumn 363, Issue , 2013, Pages 86-92

  Kahraman, S ^a   Cakmak H M ^a   Cetinkaya S ^a   Bayansal, F ^a   Cetinkara H A ^a   Guder H S ^a  

^a MUSTAFA KEMAL UNIVERSITY   (Turkey)

Author keywords

A1. Crystal structure; A2. Growth from solutions; B1. Oxides; B1. Semiconducting II VI materials

Indexed keywords

ALUMINUM; CHEMICAL BONDS; COBALT; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; ELECTRONEGATIVITY; ENERGY GAP; IONIZATION; METALLIC FILMS; OPTICAL BAND GAPS; OPTICAL FILMS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SUBSTRATES; TEMPERATURE MEASUREMENT; THIN FILMS; ULTRAVIOLET VISIBLE SPECTROSCOPY; X RAY DIFFRACTION; ZINC OXIDE;

ABSORPTION BEHAVIORS; GLASS SUBSTRATES; GROWTH FROM SOLUTION; GROWTH MECHANISMS; HEXAGONAL PHASE; MORPHOLOGICAL VARIATION; SEMICONDUCTING II-VI MATERIALS; STRUCTURAL PARAMETER;

DOPING (ADDITIVES);

EID: 84887845580     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.10.018     Document Type: Article

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