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Applied Physics Express

Volumn 6, Issue 11, 2013, Pages

Extended-defect-related photoluminescence line at 3.33 eV in nanostructured ZnO thin films

(4) Guillemin, Sophie a,b Consonni, Vincent b Masenelli, Bruno a Bremond, Georges a

a UNIVERSITÉ DE LYON (France)

b LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; HUANG-RHYS FACTORS; NANOPARTICLE SIZES; PHOTOLUMINESCENCE LINES; PHOTOLUMINESCENCE SPECTRUM; POSTGROWTH ANNEALING; RANDOM GRAIN BOUNDARIES; RELATIVE INTENSITY;

DEFECTS; GRAIN BOUNDARIES; METALLIC FILMS; OPTICAL FILMS;

PHOTOLUMINESCENCE;

EID: 84887810223 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.7567/APEX.6.111101 Document Type: Article

Times cited : (7)

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