Fabrication of CuInS2-sensitized solar cells via an improved SILAR process and its interface electron recombination

ACS Applied Materials and Interfaces

Volumn 5, Issue 21, 2013, Pages 10605-10613

  Xu, Xueqing ^a,b   Wan, Qingcui ^a,b   Luan, Chunyan ^c   Mei, Fengjiao ^a   Zhao, Qian ^a,b   An, Ping ^a,b   Liang, Zhurong ^a,b   Xu, Gang ^a,b   Zapien, Juan Antonio ^c  

^a GUANGZHOU INSTITUTE OF ENERGY CONVERSION   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

CuInS2; electron recombination; fabrication; sensitized solar cells; successive ionic layer absorption and reaction (SILAR)

Indexed keywords

CUINS2; DEPOSITION CYCLES; ELECTRON RECOMBINATIONS; ELECTRON TRANSFER; POST DEPOSITION ANNEALING; RAMAN MEASUREMENTS; SENSITIZED SOLAR CELLS; SILAR;

COPPER; DEFECTS; DEPOSITION; ELECTROLYTES; ELECTRONS; FABRICATION; INDIUM; POINT DEFECTS; SOLAR CELLS; TITANIUM DIOXIDE; X RAY DIFFRACTION;

INTERFACES (MATERIALS);

EID: 84887590572     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am402502a     Document Type: Article

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