Effects of strain relaxation on luminescent properties of InGaN/GaN nanorods from 2D to 0D transition

CLEO: Science and Innovations, CLEO_SI 2013

Volumn , Issue , 2013, Pages

  Teng, Chu Hsiang ^a   Zhang, L ^a   Hill, T ^a   Demory, B ^a   Deng, H ^a   Ku, P C ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTS OF STRAINS; INGAN/GAN; LUMINESCENT EFFICIENCY; LUMINESCENT PROPERTY; NANODISKS;

NANORODS; SEMICONDUCTOR QUANTUM WELLS;

LUMINESCENCE;

EID: 84887422876     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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2. Yuh-Renn Wu, Yih-Yin Lin, Hung-Hsun Huang, and Jasprit Singh, "Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting," J. Appl. Phys., vol. 105, p. 013117 (2009).
3. Hongping Zhao, Ronald A. Arif, and Nelson Tansu, "Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500-540 nm," Selected Topics in Quantum Electronics, IEEE Journal of, 15(4), 1104-1114 (2009).
4. Leung Kway Lee, and Pei-Cheng Ku, "Fabrication of site-controlled InGaN quantum dots using reactive-ion etching," physica status solidi (c), 9(3-4), 609-612 (2012).
5. S. Birner, S. Hackenbuchner, M. Sabathil, G. Zandler, J. A. Majewski, T. Andlauer, T. Zibold, R. Morschl, A. Trellakis, and P. Vogl, "Modeling of Semiconductor Nanostructures with nextnano3," Acta Physica Polonica A, 110(2), 111 (2006).