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Volumn 98, Issue PC, 2013, Pages 236-240
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Reduction of interface traps at the amorphous-silicon/crystalline-silicon interface by hydrogen and nitrogen annealing
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Author keywords
Annealing; Interface states; Solar cell
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Indexed keywords
A-SI/C-SI INTERFACES;
ELECTRIC FIELD ENHANCEMENT;
EXTERNAL QUANTUM EFFICIENCY;
GENERATION MECHANISM;
HETEROJUNCTION SOLAR CELLS;
INTERFACE TRAP DENSITY;
POOLE-FRENKEL EFFECT;
TRAP ASSISTED TUNNELING;
ANNEALING;
ELECTRIC FIELDS;
HETEROJUNCTIONS;
HYDROGEN;
INTERFACE STATES;
NITROGEN;
OPEN CIRCUIT VOLTAGE;
SILICON;
SIMULATED ANNEALING;
SOLAR CELLS;
AMORPHOUS SILICON;
AMORPHOUS MEDIUM;
ANNEALING;
CRYSTAL CHEMISTRY;
ELECTRIC FIELD;
HYDROGEN;
INTERFACE;
NITROGEN;
PHOTOVOLTAIC SYSTEM;
QUANTUM MECHANICS;
SILICON;
SOLAR POWER;
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EID: 84887355829
PISSN: 0038092X
EISSN: None
Source Type: Journal
DOI: 10.1016/j.solener.2013.10.003 Document Type: Article |
Times cited : (31)
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References (14)
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