메뉴 건너뛰기




Volumn 19, Issue 11, 2013, Pages 1787-1790

The electrical and optical properties of AZO thin film under different post-annealing temperatures

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TREATMENTS; ELECTRICAL AND OPTICAL PROPERTIES; NITROGEN ANNEALING; NITROGEN ATMOSPHERES; OPTICAL CHARACTERISTICS; POST-ANNEALING TEMPERATURE; PREFERENTIAL ORIENTATION; RF-MAGNETRON SPUTTERING;

EID: 84887252781     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-013-1837-5     Document Type: Conference Paper
Times cited : (20)

References (17)
  • 1
    • 50549098160 scopus 로고    scopus 로고
    • Doping influence on intrinsic stress and carrier mobility of LP-MOCVD-deposited ZnO: B thin films
    • 10.1016/j.solmat.2008.06.013
    • Addonizio ML, Diletto C (2008) Doping influence on intrinsic stress and carrier mobility of LP-MOCVD-deposited ZnO: B thin films. Sol Energy Mater Sol Cells 92:1488-1494
    • (2008) Sol Energy Mater Sol Cells , vol.92 , pp. 1488-1494
    • Addonizio, M.L.1    Diletto, C.2
  • 2
    • 0035360909 scopus 로고    scopus 로고
    • Effects of post-annealing treatment on the light emission properties of ZnO thin films on Si
    • 10.1016/S0925-3467(01)00054-4
    • Bae SH, Lee SY, Kim HY, Im S (2001) Effects of post-annealing treatment on the light emission properties of ZnO thin films on Si. Opt Mater 17:327-330
    • (2001) Opt Mater , vol.17 , pp. 327-330
    • Bae, S.H.1    Lee, S.Y.2    Kim, H.Y.3    Im, S.4
  • 3
    • 0033359259 scopus 로고    scopus 로고
    • Application of sol-gel derived films for ZnO/n-Si junction solar cells
    • 10.1016/S0040-6090(99)00559-3
    • Baik DG, Cho SM (1999) Application of sol-gel derived films for ZnO/n-Si junction solar cells. Thin Solid Films 354:227-231
    • (1999) Thin Solid Films , vol.354 , pp. 227-231
    • Baik, D.G.1    Cho, S.M.2
  • 4
    • 44049103084 scopus 로고    scopus 로고
    • Organic light emitting diodes using a Ga:ZnO anode
    • Berry JJ, Ginley DS, Burrows PE (2008) Organic light emitting diodes using a Ga:ZnO anode. Appl Phys Lett 92:193304-193304-3
    • (2008) Appl Phys Lett , vol.92 , pp. 1933041933043
    • Berry, J.J.1    Ginley, D.S.2    Burrows, P.E.3
  • 5
    • 33748916974 scopus 로고    scopus 로고
    • High conductivity and transparent ZnO:Al films prepared at low temperature by DC and MF magnetron sputtering
    • 10.1016/j.tsf.2005.12.227
    • Guillen C, Herrero J (2006) High conductivity and transparent ZnO:Al films prepared at low temperature by DC and MF magnetron sputtering. Thin Solid Films 515:640-643
    • (2006) Thin Solid Films , vol.515 , pp. 640-643
    • Guillen, C.1    Herrero, J.2
  • 6
    • 0141886871 scopus 로고    scopus 로고
    • Formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer
    • 10.1063/1.1604475
    • Kim HK, Kim KK, Park SJ, Seong TY (2003) Formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer. J Appl Phys 94:4225-4427
    • (2003) J Appl Phys , vol.94 , pp. 4225-4427
    • Kim, H.K.1    Kim, K.K.2    Park, S.J.3    Seong, T.Y.4
  • 7
    • 33745870502 scopus 로고    scopus 로고
    • Characteristics of Al doped zinc oxide (ZAO) thin films deposited by RF magnetron sputtering
    • 10.1016/j.nimb.2006.03.047
    • Kobayakawa S, Tanaka Y, Ide-Ektessabi A (2006) Characteristics of Al doped zinc oxide (ZAO) thin films deposited by RF magnetron sputtering. Nucl Instrum Methods Phys Res B 249:536-539
    • (2006) Nucl Instrum Methods Phys Res B , vol.249 , pp. 536-539
    • Kobayakawa, S.1    Tanaka, Y.2    Ide-Ektessabi, A.3
  • 8
    • 77956258001 scopus 로고    scopus 로고
    • Anode material properties of Ga-doped ZnO thin films by pulsed DC magnetron sputtering method for organic light emitting diodes
    • 10.1016/j.tsf.2010.02.068
    • Nam E, Kang YH, Jung D, Kim YS (2010) Anode material properties of Ga-doped ZnO thin films by pulsed DC magnetron sputtering method for organic light emitting diodes. Thin Solid Films 518:6245-6248
    • (2010) Thin Solid Films , vol.518 , pp. 6245-6248
    • Nam, E.1    Kang, Y.H.2    Jung, D.3    Kim, Y.S.4
  • 9
    • 0036136718 scopus 로고    scopus 로고
    • Effect of different dopant elements on the properties of ZnO thin films
    • 10.1016/S0042-207X(01)00322-0
    • Nunes P, Fortunato E, Tonello P, Fernandes FB, Vilarinho P, Martins R (2002) Effect of different dopant elements on the properties of ZnO thin films. Vacuum 64:281-285
    • (2002) Vacuum , vol.64 , pp. 281-285
    • Nunes, P.1    Fortunato, E.2    Tonello, P.3    Fernandes, F.B.4    Vilarinho, P.5    Martins, R.6
  • 10
    • 0036895653 scopus 로고    scopus 로고
    • Sol-gel preparation, characterization and studies on electrical and thermoelectrical properties of gallium doped zinc oxide films
    • 10.1016/S0167-577X(02)00865-0
    • Paul GK, Sen SK (2002) Sol-gel preparation, characterization and studies on electrical and thermoelectrical properties of gallium doped zinc oxide films. Mater Lett 57:742-746
    • (2002) Mater Lett , vol.57 , pp. 742-746
    • Paul, G.K.1    Sen, S.K.2
  • 11
    • 0030257620 scopus 로고    scopus 로고
    • Highly resistive sputtered ZnO films implanted with copper
    • 10.1557/JMR.1996.0310
    • Puchert MS, Hartmann A, Lamb RN, Martin JW (1996) Highly resistive sputtered ZnO films implanted with copper. J Mater Res 11:2463-2469
    • (1996) J Mater Res , vol.11 , pp. 2463-2469
    • Puchert, M.S.1    Hartmann, A.2    Lamb, R.N.3    Martin, J.W.4
  • 13
    • 68349105099 scopus 로고    scopus 로고
    • Deposition of low-resistivity gallium-doped zinc oxide films by low-temperature radio-frequency magnetron sputtering
    • 10.1016/j.tsf.2009.02.061
    • Tseng JY, Chen YT, Yang MY, Wang CY, Li PC, Yu WC, Hsu YF, Wang SF (2009) Deposition of low-resistivity gallium-doped zinc oxide films by low-temperature radio-frequency magnetron sputtering. Thin Solid Films 517:6310-6314
    • (2009) Thin Solid Films , vol.517 , pp. 6310-6314
    • Tseng, J.Y.1    Chen, Y.T.2    Yang, M.Y.3    Wang, C.Y.4    Li, P.C.5    Yu, W.C.6    Hsu, Y.F.7    Wang, S.F.8
  • 14
    • 2442511330 scopus 로고    scopus 로고
    • Mechanisms of green emission from ZnO films prepared by RF magnetron sputtering
    • 10.1016/j.optmat.2003.12.005
    • Wang QP, Zhang DH, Xue ZY, Zhang XJ (2004) Mechanisms of green emission from ZnO films prepared by RF magnetron sputtering. Opt Mater 26:23-26
    • (2004) Opt Mater , vol.26 , pp. 23-26
    • Wang, Q.P.1    Zhang, D.H.2    Xue, Z.Y.3    Zhang, X.J.4
  • 15
    • 0036063316 scopus 로고    scopus 로고
    • The growth and annealing of single crystalline ZnO films by low-pressure MOCVD
    • 10.1016/S0022-0248(02)01474-4
    • Ye J, Gu S, Zhu S, Chen T, Hu L, Qin F, Zhang R, Shi Y, Zheng Y (2002) The growth and annealing of single crystalline ZnO films by low-pressure MOCVD. J Crystal Growth 243:151-156
    • (2002) J Crystal Growth , vol.243 , pp. 151-156
    • Ye, J.1    Gu, S.2    Zhu, S.3    Chen, T.4    Hu, L.5    Qin, F.6    Zhang, R.7    Shi, Y.8    Zheng, Y.9
  • 16
    • 10444235836 scopus 로고    scopus 로고
    • Preparation and properties of ZnO:Ga films prepared by rf magnetron sputtering at low temperature
    • 10.1016/j.apsusc.2004.05.266
    • Yu X, Ma J, Ji F, Wang Y, Zhang X, Cheng C, Ma H (2005) Preparation and properties of ZnO:Ga films prepared by r.f. magnetron sputtering at low temperature. Appl Surf Sci 239:222-226
    • (2005) Appl Surf Sci , vol.239 , pp. 222-226
    • Yu, X.1    Ma, J.2    Ji, F.3    Wang, Y.4    Zhang, X.5    Cheng, C.6    Ma, H.7
  • 17
    • 79954570099 scopus 로고    scopus 로고
    • Influence of the grain boundary barrier height on the electrical properties of Gallium doped ZnO thin films
    • 10.1016/j.apsusc.2011.02.051
    • Yu CF, Chen SH, Sun SJ, Chou H (2011) Influence of the grain boundary barrier height on the electrical properties of Gallium doped ZnO thin films. Appl Surf Sci 257:6498-6502
    • (2011) Appl Surf Sci , vol.257 , pp. 6498-6502
    • Yu, C.F.1    Chen, S.H.2    Sun, S.J.3    Chou, H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.