The role of passivants on the stoichiometry of CdSe and GaAs nanocrystals

Journal of Physical Chemistry C

Volumn 117, Issue 42, 2013, Pages 21981-21987

  Debnath, Saikat ^a   Cherian, Roby ^a,b   Mahadevan, Priya ^a  

^a S N BOSE NATIONAL CENTRE FOR BASIC SCIENCES   (India)

^b SACRED HEART COLLEGE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; ENERGY GAP; GALLIUM ARSENIDE; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; NANOCRYSTALS; PASSIVATION; SELENIUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SELENIUM COMPOUNDS;

BANDGAP STATE; BINARY SEMICONDUCTORS; NONSTOICHIOMETRIC SEMICONDUCTORS; OPTICAL AND ELECTRONIC PROPERTIES; PASSIVANTS; PHYSICAL PROPERTIES OF MATERIALS; SEMICONDUCTOR NANOCRYSTALS; SURFACE ATOMS;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 84886649251     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp401798y     Document Type: Article

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