메뉴 건너뛰기




Volumn 114, Issue 15, 2013, Pages

Photoluminescence characterization of a high-efficiency Cu 2ZnSnS4 device

Author keywords

[No Author keywords available]

Indexed keywords

DONOR-ACCEPTOR PAIRS; EXCITATION INTENSITY; HIGH-EFFICIENCY; LOW TEMPERATURES; PEAK POSITION; PHOTOLUMINESCENCE CHARACTERIZATION; PHOTOVOLTAIC DEVICES; RADIATIVE RECOMBINATION;

EID: 84886482894     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4825317     Document Type: Article
Times cited : (95)

References (29)
  • 3
    • 85026360196 scopus 로고    scopus 로고
    • 10.1051/epjpv/2012008
    • S. Delbos, EPJ Photovoltaics 3, 35004 (2012). 10.1051/epjpv/2012008
    • (2012) EPJ Photovoltaics , vol.3 , pp. 35004
    • Delbos, S.1
  • 18
    • 84862780095 scopus 로고    scopus 로고
    • 4 (CZTS): Theoretical insights: Physics of Semiconductors
    • 10.1063/1.3666258.
    • 4 (CZTS): Theoretical insights: Physics of Semiconductors.," AIP Conf. Proc. 1399, 63-64 (2011) 10.1063/1.3666258.
    • (2011) AIP Conf. Proc. , vol.1399 , pp. 63-64
    • Walsh, A.1    Chen, S.2    Gong, X.-G.3    Wei, S.-H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.