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Volumn , Issue , 2005, Pages 292-297

Modeling and testing of SRAM for new failure mechanisms due to process variations in nanoscale CMOS

Author keywords

DFT; Failure mechanixm; March Test; Process Variation; SRAM

Indexed keywords

DFT; FAILURE MECHANISM; FAULT COVERAGES; MARCH TESTS; NANO-SCALE CMOS; PROCESS VARIATION; TEST TECHNIQUES; TEST TIME REDUCTION;

EID: 84886474055     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTS.2005.58     Document Type: Conference Paper
Times cited : (46)

References (10)
  • 1
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    • S. Borkar et al. Parameter Variations and Impact on Circuits and Microarchitecture. DAC 2003, 338-342.
    • (2003) DAC , pp. 338-342
    • Borkar, S.1
  • 3
    • 84886562045 scopus 로고    scopus 로고
    • Linked faults in random access memories: Concept, fault models, test algorithms, and industrial results
    • May
    • S. Hamdioui et al. Linked Faults in Random Access Memories: Concept, Fault Models, Test Algorithms, and Industrial Results," IEEE TCAD, May 2004.
    • (2004) IEEE TCAD
    • Hamdioui, S.1
  • 4
    • 0034505514 scopus 로고    scopus 로고
    • Experimental analysis of spot defects in SRAMs: Realistic fault models and tests
    • S. Hamdioui et al. Experimental analysis of spot defects in SRAMs: Realistic fault models and tests," ATS 131-138.
    • ATS , pp. 131-138
    • Hamdioui, S.1
  • 5
    • 0036566125 scopus 로고    scopus 로고
    • Efficient tests for realistic faults in dual-port SRAMs
    • May
    • S. Hamdioui et al. Efficient tests for realistic faults in dual-port SRAMs," IEEE Trans, on Computers, May 2002.
    • (2002) IEEE Trans, on Computers
    • Hamdioui, S.1
  • 6
    • 4544332286 scopus 로고    scopus 로고
    • Modeling and estimation of failure probability due to parameter variations in nano-scale SRAMs for yield enhancement
    • June
    • S. Mukhopadhyay et al. Modeling and estimation of failure probability due to parameter variations in nano-scale SRAMs for yield enhancement VLSI Circuit Symposium, June 2004.
    • (2004) VLSI Circuit Symposium
    • Mukhopadhyay, S.1
  • 7
    • 0035308547 scopus 로고    scopus 로고
    • The impact of intrinsic device fluctuations on CMOS SRAM cell stability
    • April
    • A. J. Bhavnagarwala et al. The impact of intrinsic device fluctuations on CMOS SRAM cell stability, JSSC. April 2001.
    • (2001) JSSC.
    • Bhavnagarwala, A.J.1
  • 9
    • 29244491792 scopus 로고    scopus 로고
    • Essentials of electronic testing for digital, memory, and mixed-signal vlsi circuits
    • M. L. Bushnell and V. D. Agarwal Essentials of Electronic Testing for Digital, Memory, and Mixed-Signal VLSI Circuits Kluwer 2000.
    • (2000) Kluwer
    • Bushnell, M.L.1    Agarwal, V.D.2
  • 10
    • 84886467771 scopus 로고    scopus 로고
    • Casey Neau, Modified MIT 50nm devices, Ph. D. dissertation, Purdue University
    • Casey Neau, Modified MIT 50nm devices, Ph. D. dissertation, Purdue University, 2004
    • (2004)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.