SCOPUS 정보 검색 플랫폼

Volumn 31, Issue 1-2, 2013, Pages 260-264

Fabrication and electrical characterization of solution-processed all-oxide transparent NiO/TiO2 p-n junction diode by sol-gel spin coating method

(7) Cavas, M a Gupta, R K b Al Ghamdi, Ahmed A c Serbetci, Z d Gafer, Zarah H c El Tantawy, Farid e Yakuphanoglu, F a,c

a FIRAT UNIVERSITY (Turkey)

b PITTSBURG STATE UNIVERSITY (United States)

c KING ABDULAZIZ UNIVERSITY (Saudi Arabia)

d BINGOL UNIVERSITY (Turkey)

e Suez Canal University (Egypt)

Author keywords

NiO; Oxide semiconductor; p n junction; Sol gel; Thin films; TiO2

Indexed keywords

ELECTRICAL CHARACTERIZATION; JUNCTION PARAMETERS; NIO; OXIDE SEMICONDUCTOR; P-N JUNCTION; RECTIFYING BEHAVIORS; SOL-GEL SPIN COATING METHOD; TIO;

COATINGS; SOL-GEL PROCESS; SOL-GELS; THERMIONIC EMISSION; THIN FILMS; TITANIUM DIOXIDE;

SEMICONDUCTOR JUNCTIONS;

EID: 84886089036 PISSN: 13853449 EISSN: 15738663 Source Type: Journal
DOI: 10.1007/s10832-013-9822-z Document Type: Article

Times cited : (12)

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