Hydrogen termination of CVD diamond films by high-temperature annealing at atmospheric pressure

Journal of Chemical Physics

Volumn 138, Issue 23, 2013, Pages

  Seshan, V ^a,b   Ullien, D ^a   Castellanos Gomez, A ^b   Sachdeva, S ^a   Murthy, D H K ^a   Savenije, T J ^a   Ahmad, H A ^a   Nunney, T S ^c   Janssens, S D ^d   Haenen, K ^d   Nesladek M ^d   Van Der Zant, H S J ^b   Sudholter E J R ^a   De Smet, L C P M ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c Thermo Fisher Scientific   (United States)

^d HASSELT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELEMENTAL COMPOSITIONS; HIGH-TEMPERATURE ANNEALING; HYDROGEN TERMINATION; HYDROGEN-TERMINATED SURFACES; MOLECULAR HYDROGEN; PLAUSIBLE MECHANISMS; SURFACE CHARACTERISTICS; SURFACE WETTABILITY;

ANNEALING; ATMOSPHERIC PRESSURE; HYDROGEN; HYDROGEN BONDS; HYDROGENATION; INDUSTRIAL APPLICATIONS; MOLECULAR PHYSICS;

DIAMOND FILMS;

EID: 84885969692     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4810866     Document Type: Article

References (36)

1. R. S. Sussmann, CVD Diamond for Electronic Devices and Sensors (Wiley, 2009).
2. R. S. Balmer, J. R. Brandon, S. L. Clewes, H. K. Dhillon, J. M. Dodson, I. Friel, P. N. Inglis, T. D. Madgwick, M. L. Markham, T. P. Mollart, N. Perkins, G. A. Scarsbrook, D. J. Twitchen, A. J. Whitehead, J. J. Wilman, and S. M. Woollard, J. Phys.: Condens. Matter 21, 364221 (2009).
3. F. Maier, J. Ristein, and L. Ley, Phys. Rev. B 64, 165411 (2001);
4. F. Maier, M. Riedel, B. Mantel, J. Ristein, and L. Ley, Phys. Rev. Lett. 85, 3472-3475 (2000).
5. M. Wang, N. Simon, C. Decorse-Pascanut, M. Bouttemy, A. Etcheberry, M. S. Li, R. Boukherroub, and S. Szunerits, Electrochim. Acta 54, 5818-5824 (2009);
6. Y. Mori, H. Kawarada, and A. Hiraki, Appl. Phys. Lett. 58, 940-941 (1991).
7. H. Kawarada, Surf. Sci. Rep. 26, 205-259 (1996);
8. A. Lafosse, M. Bertin, S. Michaelson, R. Azria, R. Akhvlediani, and A. Hoffman, Diamond Relat. Mater. 17, 949-953 (2008).
9. R. Hoffmann, A. Kriele, H. Obloh, J. Hees, M. Wolfer, W. Smirnov, N. Yang, and C. E. Nebel, Appl. Phys. Lett. 97, 052103 (2010).
10. F. Fizzotti, A. Lo Giudice, C. Manfredotti, C. Manfredotti, M. Castellino, and E. Vittone, Diamond Relat. Mater. 16, 836-839 (2007);
11. O. A. Williams, J. Hees, C. Dieker, W. Jager, L. Kirste, and C. E. Nebel, ACS Nano 4, 4824-4830 (2010).
12. S. D. Janssens, S. Drijkoningen, M. Saitner, H. G. Boyen, P. Wagner, K. Larsson, and K. Haenen, J. Chem. Phys. 137, 044702 (2012).
13. T. J. Savenije, P. van Veenendaal, M. P. de Haas, J. M. Warman, and R. E. I. Schropp, J. Appl. Phys. 91, 5671-5676 (2002).
14. J. E. Kroeze, T. J. Savenije, M. J. W. Vermeulen, and J. M. Warman, J. Phys. Chem. B 107, 7696-7705 (2003).
15. M. C. Granger and G. M. Swain, J. Electrochem. Soc. 146, 4551-4558 (1999).
16. B. S. Furniss, A. J. Hannaford, V. Rogers, P. W. G. Smith, and A. R. Tatchell, Vogel's Textbook of Practical Organic Chemistry, Including Qualitative Organic Analysis, 4th ed. (Longman, London/New York), 1978), p. 687.
17. Y. Kaibara, K. Sugata, M. Tachiki, H. Umezawa, and H. Kawarada, Diamond Relat. Mater. 12, 560-564 (2003);
18. L. Ostrovskaya, V. Perevertailo, V. Ralchenko, A. Dementjev, and O. Loginova, Ibid. 11, 845-850 (2002).
19. M. Geisler and T. Hugel, Adv. Mater. 22, 398-402 (2010);
20. F. Pinzari, P. Ascarelli, E. Cappelli, G. Mattei, and R. Giorgi, Diamond Relat. Mater. 10, 781-785 (2001).
21. J. B. Cui, J. Ristein, M. Stammler, K. Janischowsky, G. Kleber, and L. Ley, Diamond Relat. Mater. 9, 1143-1147 (2000).
22. D. Ballutaud, N. Simon, H. Girard, E. Rzepka, and B. Bouchet-Fabre, Diamond Relat. Mater. 15, 716-719 (2006).
23. M. Wang, N. Simon, G. Charrier, M. Bouttemy, A. Etcheberry, M. S. Li, R. Boukherroub, and S. Szunerits, Electrochem. Commun. 12, 351-354 (2010).
24. C. Swiatkowski, A. Sanders, K. D. Buhre, and M. Kunst, J. Appl. Phys. 78, 1763-1775 (1995).
25. J. C. Zheng, X. N. Xie, A. T. S. Wee, and K. P. Loh, Diamond Relat. Mater. 10, 500-505 (2001);
26. W. Deferme, G. Tanasa, J. Amir, K. Haenen, M. Nesladek, and C. F. J. Flipse, Ibid. 15, 687-691 (2006).
27. P. T. Kissinger and W. R. Heineman, J. Chem. Educ. 60, 702-706 (1983).
28. S. P. Rao, S. R. Singh, and S. R. Bandakavi, Proc. Indian Natl. Sci. Acad.: Phys. Sci. 44, 333-335 (1978).
29. N. J. Yang, J. H. Yu, H. Uetsuka, and C. E. Nebel, Electrochem. Commun. II, 2237-2240 (2009).
30. H. Uetsuka, D. Shin, N. Tokuda, K. Saeki, and C. E. Nebel, Langmuir 23, 3466-3472 (2007);
31. J. Wang, M.A. Firestone, O. Auciello, and J. A. Carlisle, Ibid. 20, 11450-11456 (2004).
32. I. Langmuir, J. Am. Chem. Soc. 34, 860-877 (1912);
33. F. Jansen, I. Chen, and M. A. Machonkin, J. Appl. Phys. 66, 5749-5755 (1989).
34. A. C. Ferrari and J. Robertson, Phys. Rev. B 64, 075414 (2001).
35. C. Manfredotti, P. Bonino, M. De La Pierre, E. Vittone, and C. Manfredotti, Diamond Relat. Mater. 19, 279-283 (2010);
36. T. Ando, M. Ishii, M. Kamo, and Y. Sato, J. Chem. Soc., Faraday Trans. 89, 1783-1789 (1993).