Effect of doping concentration on the properties of bismuth doped tin sulfide thin films prepared by spray pyrolysis

Materials Science in Semiconductor Processing

Volumn 17, Issue , 2014, Pages 138-142

  Manohari, A Gowri ^a   Dhanapandian, S ^a   Manoharan, C ^a   Kumar, K Santhosh ^a   Mahalingam, T ^b  

^a ANNAMALAI UNIVERSITY   (India)

^b KARUNYA UNIVERSITY   (India)

Author keywords

Bismuth doping; Hall effect; Spray pyrolysis; Tin sulfide

Indexed keywords

BISMUTH DOPING; GLASS SUBSTRATES; OPTICAL AND ELECTRICAL PROPERTIES; ORTHORHOMBIC STRUCTURES; PARTICLE SIZE AND SURFACES; SPRAY-PYROLYSIS TECHNIQUES; SUBSTRATE TEMPERATURE; TIN SULFIDE;

ATOMIC FORCE MICROSCOPY; BISMUTH; ELECTRIC PROPERTIES; ENERGY GAP; HALL EFFECT; SPRAY PYROLYSIS; SUBSTRATES; SULFUR COMPOUNDS; SURFACE ROUGHNESS; THIN FILMS; TIN;

SEMICONDUCTOR DOPING;

EID: 84885610136     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2013.09.012     Document Type: Article

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