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Volumn 350, Issue 1, 1999, Pages 72-78

Structure and photoconductive properties of dip-deposited SnS and SnS2 thin films and their conversion to tin dioxide by annealing in air

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ENERGY GAP; HIGH TEMPERATURE EFFECTS; LIGHT ABSORPTION; PHOTOCONDUCTIVITY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING TIN COMPOUNDS; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

EID: 0032624256     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00276-X     Document Type: Article
Times cited : (139)

References (26)
  • 14
    • 0020256504 scopus 로고
    • G. Hass, M.H. Francombe, Vossen J.L. Physics of Thin Films. New York: Academic Press
    • Chopra K.L., Kainthla R.C., Pandya D.K., Thakoorin A.P. Hass G., Francombe M.H., Vossen J.L. Physics of Thin Films 12:1982;167 Academic Press, New York.
    • (1982) , vol.12 , pp. 167
    • Chopra, K.L.1    Kainthla, R.C.2    Pandya, D.K.3    Thakoorin, A.P.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.