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Volumn 350, Issue 1, 1999, Pages 72-78
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Structure and photoconductive properties of dip-deposited SnS and SnS2 thin films and their conversion to tin dioxide by annealing in air
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
ENERGY GAP;
HIGH TEMPERATURE EFFECTS;
LIGHT ABSORPTION;
PHOTOCONDUCTIVITY;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING TIN COMPOUNDS;
SUBSTRATES;
THIN FILMS;
X RAY DIFFRACTION ANALYSIS;
TIN SULFIDES;
SEMICONDUCTING FILMS;
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EID: 0032624256
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(99)00276-X Document Type: Article |
Times cited : (139)
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References (26)
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