Hybrid ZnO/phthalocyanine photovoltaic device with highly resistive ZnO intermediate layer

ACS Applied Materials and Interfaces

Volumn 5, Issue 19, 2013, Pages 9386-9395

  Izaki, Masanobu ^a,b   Chizaki, Ryo ^a   Saito, Takamasa ^a   Murata, Kazufumi ^a   Sasano, Junji ^a   Shinagawa, Tsutomu ^c  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c OSAKA MUNICIPAL TECHNICAL RESEARCH INSTITUTE   (Japan)

Author keywords

hybrid; photovoltaic device; phthalocyanine; rectification; zinc oxide

Indexed keywords

BUFFER LAYERS; CONVERSION EFFICIENCY; CURRENT DENSITY; EFFICIENCY; ELECTRIC RECTIFIERS; II-VI SEMICONDUCTORS; LIGHT ABSORPTION; MAGNETIC SEMICONDUCTORS; OPEN CIRCUIT VOLTAGE; OPTICAL LATTICES; OXIDE MINERALS; PHOTOVOLTAIC EFFECTS; VACUUM EVAPORATION; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

ELECTRICAL CHARACTERISTIC; HYBRID; HYBRID PHOTOVOLTAIC DEVICES; METAL-FREE PHTHALOCYANINE; PHOTOVOLTAIC DEVICES; PHTHALOCYANINE; RECTIFICATION; ZINC OXIDE SEMICONDUCTORS (ZNO);

SEMICONDUCTING ZINC COMPOUNDS;

EID: 84885467072     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am403137x     Document Type: Article

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