Giant piezoresistive On/Off ratios in rare-earth chalcogenide thin films enabling nanomechanical switching

Nano Letters

Volumn 13, Issue 10, 2013, Pages 4650-4653

  Copel, M ^a   Kuroda, M A ^a   Gordon, M S ^a   Liu, X H ^a   Mahajan, S S ^a   Martyna, G J ^a   Moumen, N ^a   Armstrong, C ^a   Rossnagel, S M ^a   Shaw, T M ^a   Solomon, P M ^a   Theis, T N ^a   Yurkas, J J ^a   Zhu, Y ^a   Newns, D M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

chalcogenide; electrical transport; MEMS; nanoelectromechanical systems (NEMS); Piezoresistance; piezotronic

Indexed keywords

CHALCOGENIDES; CMOS INTEGRATED CIRCUITS; ELECTROMECHANICAL DEVICES; MEMS; METAL INSULATOR TRANSITION; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; PIEZOELECTRICITY; RARE EARTHS; SEMICONDUCTOR DEVICE MANUFACTURE;

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; ELECTRICAL TRANSPORT; HIGH-PERFORMANCE AND SCALABILITIES; INSULATOR-TO-METAL TRANSITIONS; NANO ELECTROMECHANICAL SYSTEMS; PIEZORESISTANCE; PIEZOTRONIC; RARE EARTH CHALCOGENIDES;

THIN FILMS;

LANTHANIDE; OXIDE;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; MICROELECTROMECHANICAL SYSTEM; SEMICONDUCTOR;

MEMBRANES, ARTIFICIAL; METALS, RARE EARTH; MICRO-ELECTRICAL-MECHANICAL SYSTEMS; OXIDES; SEMICONDUCTORS;

EID: 84885457270     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl401710f     Document Type: Article

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