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Journal of Alloys and Compounds

Volumn 585, Issue , 2014, Pages 94-97

Se concentration dependent band gap engineering in ZnO1- xSex thin film for optoelectronic applications

(7) Lee, Jae Chul a Lee, Ji Eun a Lee, Ju Won a Lee, Jae Choon a Subramaniam, N G a Kang, Tae Won a Ahuja, Rajeev b

a Dongguk University (South Korea)

b UPPSALA UNIVERSITY (Sweden)

Author keywords

Band gap engineering; PLD; Selenium; ZnO

Indexed keywords

BAND GAP ENGINEERING; CONCENTRATION-DEPENDENT; OPTOELECTRONIC APPLICATIONS; PULSED-LASER DEPOSITION TECHNIQUE; SAPPHIRE SUBSTRATES; SELENIUM CONCENTRATIONS; UV-VISIBLE SPECTROMETERS; ZNO;

ENERGY GAP; PHOTOELECTRONS; PULSED LASER DEPOSITION; SAPPHIRE; SELENIUM; THIN FILMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84885457111 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2013.09.134 Document Type: Article

Times cited : (12)

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