Controlled wurtzite inclusions in self-catalyzed zinc blende III-V semiconductor nanowires

Journal of Crystal Growth

Volumn 378, Issue , 2013, Pages 506-510

  Rieger, Torsten ^a,b   Lepsa, Mihail Ion ^a,b   Schapers, Thomas ^a,b   Grützmacher, Detlev ^a,b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b Jülich Aachen Research Alliance Fundamentals of Future Information Technology JARA FIT   (Germany)

Author keywords

Crystal structure; Droplet engineering; Molecular beam epitaxy; Nanowires; Self catalyzed; Semiconducting gallium arsenide

Indexed keywords

CATALYSIS; CONTACT ANGLE; DROPS; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; ZINC; ZINC SULFIDE;

GA DESORPTION; GAAS NANOWIRES; MBE GROWTH; SELF-CATALYZED; SEMICONDUCTOR NANOWIRE; WURTZITES; ZINC BLENDE;

CRYSTAL STRUCTURE;

EID: 84885422953     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.12.035     Document Type: Article

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