Nonvolatile flash memory based on biologically integrated hierarchical nanostructures

Langmuir

Volumn 29, Issue 40, 2013, Pages 12483-12489

  Sano, Ken Ichi ^a,e   Miura, Atsushi ^b,c   Yoshii, Shigeo ^c,d   Okuda, Mitsuhiro ^d,f   Fukuta, Megumi ^c   Uraoka, Yukiharu ^c   Fuyuki, Takashi ^c   Yamashita, Ichiro ^c,d   Shiba, Kiyotaka ^a  

^a CANCER INSTITUTE   (Japan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^d PANASONIC CORPORATION   (Japan)

^e NIPPON INSTITUTE OF TECHNOLOGY   (Japan)

^f UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE STORAGE CAPACITY; HIERARCHICAL NANOSTRUCTURES; LAYER-BY-LAYER METHODS; MONOLAYER STRUCTURES; MULTI-LAYERED STRUCTURE; MULTIFUNCTIONALITY; NONVOLATILE FLASH MEMORY; OXIDE SEMICONDUCTOR;

BIOMINERALIZATION; FLASH MEMORY; PEPTIDES; SEMICONDUCTOR DEVICE STRUCTURES; THREE DIMENSIONAL;

NANOPARTICLES;

NANOMATERIAL;

ARTICLE; CHEMISTRY; SEMICONDUCTOR; TRANSMISSION ELECTRON MICROSCOPY; ULTRASTRUCTURE; VOLATILIZATION;

MICROSCOPY, ELECTRON, TRANSMISSION; NANOSTRUCTURES; SEMICONDUCTORS; VOLATILIZATION;

EID: 84885394400     PISSN: 07437463     EISSN: 15205827     Source Type: Journal    
DOI: 10.1021/la402742f     Document Type: Article

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