Floating nanodot gate memory devices based on biomineralized inorganic nanodot array as a storage node

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 1-3, 2006, Pages

  Miura, Atsushi ^a   Hikono, Takio ^a   Matsumura, Takashi ^a   Yano, Hiroshi ^a   Hatayama, Tomoaki ^a   Uraoka, Yukiharu ^a   Fuyuki, Takashi ^a   Yoshii, Shigeo ^b   Yamashita, Ichiro ^a,b,c  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b PANASONIC CORPORATION   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Biomineralized nanodot; Ferritin; Floating gate memory; Memory effect; MOS device

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; EMBEDDED SYSTEMS; FIELD EFFECT TRANSISTORS; HYSTERESIS; MOS DEVICES; NANOSTRUCTURED MATERIALS;

BIOMINERALIZED NANODOTS; FERRITIN; FLOATING GATE MEMORIES; MEMORY EFFECTS;

DATA STORAGE EQUIPMENT;

EID: 32044436332     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L1     Document Type: Article

References (8)

1. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbe and K. Chan: Appl. Phys. Lett. 68 (1996) 1377.
2. A. Kohno, H. Murakami, M. Ikeda, S. Miyazaki and M. Hirose: Jpn. J. Appl. Phys. 40 (2001) L721.
3. S. Tiwari, F. Rana, K. Chan, L. Shi and H. Hanafi: Appl. Phys. Lett. 69 (1996) 1232.
4. E. Kapetanakis, P. Normand, D. Tsoukalas and K. Beltsios: Appl. Phys. Lett. 80 (2002) 2794.
5. R. Tsukamoto, K. Iwahori, M. Muraoka and I. Yamashita: Bull. Chem. Soc. Jpn. 78 (2005) 2075.
6. I. Yamashita, J. Hayashi and M. Hara: Chem. Lett. 33 (2004) 1158.
7. T. Feng, H. Yu, M. Dicken, J. R. Heath and H. A. Atwater: Appl. Phys. Lett. 86 (2005) 033103.
8. A. Kanjilal, J. L. Hansen, P. Gaiduk, A. N. Larsen, N. Cherkashin, A. Claverie, P. Normand, E. Kapelanakis, D. Skarlatos and D. Tsoukalas: Appl. Phys. Lett. 82 (2003) 1212.