Nonvolatile organic memory devices with CdTe quantum dots

Microelectronic Engineering

Volumn 111, Issue , 2013, Pages 210-213

  Kim, Hyun Gyo ^a   Gim, Man Jun ^a   Jeon, Hyun Jun ^a   Kim, Minchul ^a   Jeun, Jun Ho ^b   Kim, Jung Min ^c   Kim, Yong Sang ^d  

^a Gyeonggi Science High School   (South Korea)

^b Myong Ji University   (South Korea)

^c Samsung Electro Mechanics   (South Korea)

^d Sungkyunkwan University   (South Korea)

Author keywords

CdTe QDs; Memory device; Non volatile organic; PMMA

Indexed keywords

CADMIUM TELLURIDE; CAPACITANCE; CARRIER TRANSPORT; DATA STORAGE EQUIPMENT; DIGITAL STORAGE; NANOCRYSTALS; SEMICONDUCTING ORGANIC COMPOUNDS;

CAPACITANCE VOLTAGE; CAPACITANCE VOLTAGE CHARACTERISTIC; CDTE QDS; CDTE QUANTUM DOTS (QDS); NON-VOLATILE; NON-VOLATILE MEMORY; ORGANIC MEMORY DEVICES; PMMA;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84885185991     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2013.03.157     Document Type: Article

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