메뉴 건너뛰기




Volumn 119, Issue , 2013, Pages 124-128

Substrate versus superstrate configuration for stable thin film silicon solar cells

Author keywords

Amorphous silicon; Defect formation; Hydrogen; Light induced degradation; Nanocrystalline; PECVD

Indexed keywords

DEFECT FORMATION; DEVICE CONFIGURATIONS; INTERFACE DELAMINATION; LIGHT-INDUCED DEGRADATION; NANOCRYSTALLINES; POLYMORPHOUS SILICON; SUBSTRATE STRUCTURE; THIN-FILM SILICON SOLAR CELLS;

EID: 84884906814     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2013.05.045     Document Type: Article
Times cited : (27)

References (24)
  • 1
    • 80053179201 scopus 로고    scopus 로고
    • Innovative dual function nc-SiOx:H layer leading to a >16% efficient multi-junction thin-film silicon solar cell
    • B. Yan, G. Yue, L. Sivec, J. Yang, S. Guha, and C-S. Jiang Innovative dual function nc-SiOx:H layer leading to a >16% efficient multi-junction thin-film silicon solar cell Applied Physics Letters 99 2011 113512
    • (2011) Applied Physics Letters , vol.99 , pp. 113512
    • Yan, B.1    Yue, G.2    Sivec, L.3    Yang, J.4    Guha, S.5    Jiang, C.-S.6
  • 2
    • 84886390680 scopus 로고    scopus 로고
    • 〈http://www.nrel.gov/ncpv/images/efficiency-chart.jpg〉
  • 3
    • 21544455021 scopus 로고
    • Reversible conductivity changes in discharge produced amorphous Si
    • D.L. Staebler, and C.R. Wronski Reversible conductivity changes in discharge produced amorphous Si Applied Physics Letters 31 1977 292
    • (1977) Applied Physics Letters , vol.31 , pp. 292
    • Staebler, D.L.1    Wronski, C.R.2
  • 4
    • 0348137163 scopus 로고    scopus 로고
    • Plasma enhanced chemical vapor deposition of amorphous, polymorphous and microcrystalline silicon films
    • P. Roca i Cabarrocas Plasma enhanced chemical vapor deposition of amorphous, polymorphous and microcrystalline silicon films Journal of Non-Crystalline Solids 266-269 2000 31
    • (2000) Journal of Non-Crystalline Solids , vol.266-269 , pp. 31
    • Cabarrocas, P.R.I.1
  • 5
    • 0036467816 scopus 로고    scopus 로고
    • Growth and optoelectronic properties of polymorphous silicon thin films
    • P. Roca i Cabarrocas, A.Fontcuberta i Morral, and Y. Poissant Growth and optoelectronic properties of polymorphous silicon thin films Thin Solid Films 403 2002 39
    • (2002) Thin Solid Films , vol.403 , pp. 39
    • Cabarrocas, P.R.I.1    Morral, A.F.I.2    Poissant, Y.3
  • 7
    • 84863432568 scopus 로고    scopus 로고
    • Irreversible light-induced degradation and stabilization of hydrogenated polymorphous silicon solar cells
    • K.H. Kim, E.V. Johnson, and P. Roca i Cabarrocas Irreversible light-induced degradation and stabilization of hydrogenated polymorphous silicon solar cells Solar Energy Materials and Solar Cells 105 2012 208
    • (2012) Solar Energy Materials and Solar Cells , vol.105 , pp. 208
    • Kim, K.H.1    Johnson, E.V.2    Cabarrocas, P.R.I.3
  • 9
    • 84945119182 scopus 로고    scopus 로고
    • Light induced electrical and macroscopic changes in hydrogenated polymorphous silicon solar cells
    • K.H. Kim, E.V. Johnson, A. Abramov, and P. Roca i Cabarrocas Light induced electrical and macroscopic changes in hydrogenated polymorphous silicon solar cells EPJ Photovoltaics 3 2012 30301
    • (2012) EPJ Photovoltaics , vol.3 , pp. 30301
    • Kim, K.H.1    Johnson, E.V.2    Abramov, A.3    Cabarrocas, P.R.I.4
  • 10
    • 0029752583 scopus 로고    scopus 로고
    • Irreversible light-enhanced degradation in amorphous silicon solar cells at elevated temperatures
    • DOI 10.1063/1.116745, PII S0003695196021018
    • D.E. Carlson, and K. Rajan Light-enhanced degradation in amorphous silicon solar cells at elevated temperatures Applied Physics Letters 68 1996 28 30 (Pubitemid 126688196)
    • (1996) Applied Physics Letters , vol.68 , Issue.1 , pp. 28-30
    • Carlson, D.E.1    Rajan, K.2
  • 11
    • 0001176876 scopus 로고    scopus 로고
    • Hydrogen ion motion in amorphous silicon solar cells at elevated temperatures
    • D.E. Carlson, and K. Rajan Hydrogen ion motion in amorphous silicon solar cells at elevated temperatures Applied Physics Letters 69 1996 1447 1449 (Pubitemid 126595408)
    • (1996) Applied Physics Letters , vol.69 , Issue.10 , pp. 1447-1449
    • Carlson, D.E.1    Rajan, K.2
  • 13
    • 22944446108 scopus 로고    scopus 로고
    • Hydrogen diffusion and induced-crystallization in intrinsic and doped hydrogenated amorphous silicon films
    • F. Kail, A. Hadjadj, and P. Roca i Cabarrocas Hydrogen diffusion and induced-crystallization in intrinsic and doped hydrogenated amorphous silicon films Thin Solid Films 487 2005 126
    • (2005) Thin Solid Films , vol.487 , pp. 126
    • Kail, F.1    Hadjadj, A.2    Cabarrocas, P.R.I.3
  • 15
    • 84886403541 scopus 로고    scopus 로고
    • 〈http://assets.newport.com/web900w-EN/images/1121.gif〉
  • 17
    • 84873661264 scopus 로고    scopus 로고
    • Geometrical optimization and electrical performance comparison of thin-film tandem structures based on pm-Si:H and μc-Si:H using computer simulation
    • F. Dadouche, O. Béthoux, M.E. Gueunier-Farret, E.V. Johnson, P. Roca i Cabarrocas, C. Marchand, and J.P. Kleider Geometrical optimization and electrical performance comparison of thin-film tandem structures based on pm-Si:H and μc-Si:H using computer simulation EPJ Photovoltaics 2 2011 20301
    • (2011) EPJ Photovoltaics , vol.2 , pp. 20301
    • Dadouche, F.1    Béthoux, O.2    Gueunier-Farret, M.E.3    Johnson, E.V.4    Cabarrocas, P.R.I.5    Marchand, C.6    Kleider, J.P.7
  • 19
    • 0019032858 scopus 로고
    • Formation of pin holes in hydrogenated amorphous silicon at high temperatures and the yield strength of a-Si:H
    • H.R. Shanks, C.J. Fang, L. Ley, M. Cardona, F.J. Demond, and S. Kalbitzer Formation of pin holes in hydrogenated amorphous silicon at high temperatures and the yield strength of a-Si:H Physica Status Solidi B 100 1980 43 56
    • (1980) Physica Status Solidi B , vol.100 , pp. 43-56
    • Shanks, H.R.1    Fang, C.J.2    Ley, L.3    Cardona, M.4    Demond, F.J.5    Kalbitzer, S.6
  • 20
    • 0000487119 scopus 로고
    • Infrared spectrum and structure of hydrogenated amorphous silicon
    • H.R. Shanks, and L. Ley Infrared spectrum and structure of hydrogenated amorphous silicon Journal of Applied Physics 52 1981 811 813
    • (1981) Journal of Applied Physics , vol.52 , pp. 811-813
    • Shanks, H.R.1    Ley, L.2
  • 21
    • 0034285327 scopus 로고    scopus 로고
    • An explanation for the low-temperature H evolution peak in hydrogenated amorphous silicon films deposited 'on the edge of crystallinity
    • H. Mahan, W. Beyer, B.L. Williamson, J. Yang, and S. Guha An explanation for the low-temperature H evolution peak in hydrogenated amorphous silicon films deposited 'on the edge of crystallinity Philosophical Magazine Letters 80 2000 647
    • (2000) Philosophical Magazine Letters , vol.80 , pp. 647
    • Mahan, H.1    Beyer, W.2    Williamson, B.L.3    Yang, J.4    Guha, S.5
  • 24
    • 0000578389 scopus 로고    scopus 로고
    • Hydrogen collision model: Quantitative description of metastability in amorphous silicon
    • H.M. Branz Hydrogen collision model: quantitative description of metastability in amorphous silicon Physical Review B 59 1999 5498 5512
    • (1999) Physical Review B , vol.59 , pp. 5498-5512
    • Branz, H.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.