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Journal of Applied Physics

Volumn 113, Issue 15, 2013, Pages

Terahertz intersubband transition in GaN/AlGaN step quantum well

(9) Wu, F a Tian, W a Yan, W Y a Zhang, J a Sun, S C a Dai, J N a Fang, Y Y a Wu, Z H a Chen, C Q a

a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION CO-EFFICIENT; DIPOLE MATRIX ELEMENTS; FIRST EXCITED STATE; INTERSUBBAND TRANSITIONS; OSCILLATOR STRENGTHS; STEP QUANTUM WELLS; STRUCTURE PARAMETER; TERAHERTZ RANGE;

ALUMINUM;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84884200323 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4802496 Document Type: Article

Times cited : (40)

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