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Volumn 118, Issue , 2013, Pages 141-148

First quadrant phototransistor behavior in CuInSe2 photovoltaics

Author keywords

Back contacts; Chalcopyrites; CuInSe2; Minority carriers; Mo contacts; Photocurrent

Indexed keywords

BACK CONTACT; CHALCOPYRITES; CUINSE2; CURRENT VOLTAGE MEASUREMENT; DIFFERENTIAL RESISTANCES; MINORITY CARRIER; REVERSE-SATURATION CURRENTS; TEMPERATURE DEPENDENT;

EID: 84883769152     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2013.07.032     Document Type: Article
Times cited : (12)

References (11)
  • 2
    • 34548180960 scopus 로고
    • Detailed balance limit of efficiency of p-n junction solar cells
    • W. Shockley, and H.J. Queisser Detailed balance limit of efficiency of p-n junction solar cells Journal of Applied Physics 32 1961 510 519
    • (1961) Journal of Applied Physics , vol.32 , pp. 510-519
    • Shockley, W.1    Queisser, H.J.2
  • 5
    • 0000516169 scopus 로고    scopus 로고
    • Effect of the Au/CdTe back contact on IV and CV characteristics of Au/CdTe/CdS/TCO solar cells
    • A. Niemegeers, and M. Burgelman Effects of the Au/CdTe back contact on IV and CV characteristics of Au/CdTe/CdS/TCO solar cells Journal of Applied Physics 81 1997 2881 2886 (Pubitemid 127584692)
    • (1997) Journal of Applied Physics , vol.81 , Issue.6 , pp. 2881-2886
    • Niemegeers, A.1    Burgelman, M.2
  • 9


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.