Where does photocurrent flow in polycrystalline CdS?

Applied Physics Letters

Volumn 86, Issue 21, 2005, Pages 1-3

  Azulay, D ^a   Millo, O ^a   Silbert, S ^a   Balberg, I ^a   Naghavi, N ^b  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM SULFIDE; ELECTRIC CONDUCTANCE; GRAIN BOUNDARIES; METALLIC FILMS; PHOTOVOLTAIC EFFECTS; POLYCRYSTALLINE MATERIALS;

INTERCRYSTALLINE TRANSPORT; OPTOELECTRONIC PROPERTIES; PHOTOCURRENT FLOW; SUBBAND-GAP;

PHOTOCURRENTS;

EID: 20844463563     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1923157     Document Type: Article

References (29)

1. B. Ray, II-VI Compounds (Pergamon, Oxford, 1969).
2. For many data and discussion on the photoconductivity of CdS, see R. H. Bube, Photoelectronic Properties of Semiconductors (Cambridge University Press, Cambridge, UK, 1992).
3. For the data on Urbach tail in CdS, see C. C. Klick, Phys. Rev. 89, 274 (1953); While for many data and discussions on the optical properties of CdS and in particular of the Urbach absorption tail, see C. F. Klingshirm, Semiconductor Optics (Springer, Berlin, 1995).
4. For the data on Urbach tail in CdS, see C. C. Klick, Phys. Rev. 89, 274 (1953); While for many data and discussions on the optical properties of CdS and in particular of the Urbach absorption tail, see C. F. Klingshirm, Semiconductor Optics (Springer, Berlin, 1995).
5. D. Redfield and R. H. Bube, Photoinduced Defects in Semiconductors, (Cambridge University Press, Cambridge, UK 1996).
6. R. H. Bube, Photovoltaic Materials (Imperial College Press, London, 1998).
7. M. Grus and A. Sikorska, Physica B 266, 139 (1999).
8. A. E. Rakhshani, J. Phys.: Condens. Matter 12, 4391 (2000).
9. J. Kokaj and A. E. Rakhshani, J. Phys. D 37, 1970 (2004).
10. For a review, see G. Cody, in Semiconductors and Semimetals, Vol. 21C, edited by, J. I. Pankove, (Academic, New York, 1984), p. 11
11. For a more recent discussion, see G. Cody, J. Non-Cryst. Solids 161, 3 (1992);
12. See also, G. D. Cody, T. Tiedje, B. Abeles, B. Brooks, and Y. Goldstein, Phys. Rev. Lett. 47, 1480 (1981).
13. S. A. Tomas, O. Vigil, J. J. Alvarado-Gils, R. Lozada-Morales, O. Zelaya-Angel, H. Vargas, and A. Ferreira da Silva, J. Appl. Phys. 78, 2204 (1994) and references therein.
14. O. Zelaya-Angel and R. Lozada-Morales, Phys. Rev. B 62, 13064 (2000).
15. D. Cha, S. Kim, and N. K. Huang, Mater. Sci. Eng., B 106, 63 (2004).
16. B. Ullrich, J. W. Tomm, N. M. Dushkina, Y. Tomm, H. Sakai, and Y. Segawa, Solid State Commun. 116, 33 (2000).
17. J. W. Orton, B. J. Goldsmith, J. A. Chapman, and M. J. Powell, J. Appl. Phys. 53, 1602 (1982).
18. A. Carbone and P. Mazzetti, Phys. Rev. B 51, 13261 (1994).
19. S. W. Biernacki, Solid State Commun. 88, 365 ((1993).
20. A. A. Istratov and O. F. Vyvenko, J. Appl. Phys. 80, 4400 (1996).
21. H. C. Wright, R. J. Downey, and J. R. Canning, J. Phys. D 1, 1593 (1968).
22. D. Baum, H. X. Jiang, and A. Honig, J. Lumin. 40, 119 (1988).
23. K. L. Narayanan, R. Rajaraman, M. C. Valsakumar, K. P. Vejayakumar, and K. G. M. Nair, Opt. Mater. (Amsterdam, Neth.) 17, 355 (2002).
24. G. Hodes, Chemical Solution Deposition of Semiconductor Films (Marcel Dekker, New York, 2003).
25. D. Azulay, I. Balberg, J. P. Conde, V. Chu, and O. Millo, Phys. Rev. B 71, 11304 (2005).
26. I. Visoly-Fisher, S. R. Cohen, and D. Cahen, Appl. Phys. Lett. 82, 4 (2003).
27. S. Smith, P. Zhang, T. Gessert, and A. Mascarenhas, Appl. Phys. Lett. 85, 3854 (2002).
28. P. Sutter, E. Sutter, and T. R. Ohno, Appl. Phys. Lett. 84, 2100 (2004).
29. I. Balberg, Y. Dover, R. Naides, J. P. Conde, and V. Chu, Phys. Rev. B 69, 035203 (2004).