Device performance in a fully functional 800MHz DDR3 spin torque magnetic random access memory

2013 5th IEEE International Memory Workshop, IMW 2013

Volumn , Issue , 2013, Pages 17-20

  Janesky, J ^a   Rizzo, N D ^a   Houssameddine, D ^a   Whig, R ^a   Mancoff, F B ^a   Deherrera, M ^a   Sun, J J ^a   Schneider, M ^a   Chia, H J ^a   Aggarwal, S ^a   Nagel, K ^a   Deshpande, S ^a   Andre, T ^a   Alam, S ^a   Tan, C H ^a   Slaughter, J M ^a   Hellmold, S ^a   Lopresti, P ^a  

^a Everspin Technologies Inc   (United States)

Author keywords

magnetic tunnel junction DDR3; MRAM; Spin Torque

Indexed keywords

DEVICE PERFORMANCE; HIGH-SPEED OPERATION; MAGNETIC RANDOM ACCESS MEMORY; MAGNETIC TUNNEL JUNCTION; MRAM; NON-VOLATILE MEMORY; PERFORMANCE GAPS; SPIN TORQUE;

CMOS INTEGRATED CIRCUITS; COBALT COMPOUNDS; DYNAMIC RANDOM ACCESS STORAGE; HARD DISK STORAGE; MAGNETIC DEVICES; MRAM DEVICES; STATIC RANDOM ACCESS STORAGE;

MAGNETIC STORAGE;

EID: 84883704725     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2013.6582086     Document Type: Conference Paper

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