Consideration of conductive filament for realization of low-current and highly-reliable TaOx ReRAM

2013 5th IEEE International Memory Workshop, IMW 2013

Volumn , Issue , 2013, Pages 34-37

  Yasuhara, R ^a   Ninomiya, T ^a   Muraoka, S ^a   Wei, Z ^a   Katayama, K ^a   Takagi, T ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

Filament; Oxygen vacancy; ReRAM; Retention

Indexed keywords

CONDUCTIVE FILAMENTS; OXYGEN CONTENT; RERAM; RETENTION; SYSTEMATIC EXPERIMENTATION;

FILAMENTS (LAMP);

OXYGEN VACANCIES;

EID: 84883677093     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2013.6582091     Document Type: Conference Paper

References (6)

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5. T. Ninomiya et al., "Conductive Filament Scaling of TaOx Bipolar ReRAM for Long Retentionwith Low Current Operation, " VLSI Tech. Dig., 73-74 (2012).
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