Conductive filament scaling of TaO x bipolar ReRAM for long retention with low current operation

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2012, Pages 73-74

  Ninomiya, T ^a   Takagi, T ^a   Wei, Z ^a   Muraoka, S ^a   Yasuhara, R ^a   Katayama, K ^a   Ikeda, Y ^a   Kawai, K ^a   Kato, Y ^a   Kawashima, Y ^a   Ito, S ^a   Mikawa, T ^a   Shimakawa, K ^a   Aono, K ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE FILAMENTS; DATA RETENTION; HIGH DENSITY; LOW CURRENTS;

OXYGEN VACANCIES;

EID: 84866530067     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2012.6242467     Document Type: Conference Paper

References (5)

1. R. Waser, et al., Adv. Mater., 21, 2632-2663 (2009)
2. J. Yi, et al., VLSI Tech. Dig., pp. 48 (2011)
3. Z. Wei, et al., IEDM Tech. Dig., pp.721 (2011)
4. S. Yu, et al., IEDM Tech. Dig., pp. 413 (2011)
5. Y.M. Strelinker, et al., Phys. Rev. E, 72, 016121 (2005)