Phase Change Memories have taken the field

2013 5th IEEE International Memory Workshop, IMW 2013

Volumn , Issue , 2013, Pages 13-16

  Bez, Roberto ^a   Cappelletti, Paolo ^a   Servalli, Giorgio ^a   Pirovano, Agostino ^a  

^a MICRON TECHNOLOGY INC   (United States)

Author keywords

chalcogenide materials; emerging non volatile memories; PCM; Phase Change Memory

Indexed keywords

CHALCOGENIDE MATERIALS; CYCLING PERFORMANCE; EMERGING NON-VOLATILE MEMORY; FUTURE APPLICATIONS; PHASE CHANGE MEMORY (PCM); STATE OF THE ART; VOLUME PRODUCTION; WRITE THROUGHPUTS;

PULSE CODE MODULATION;

PHASE CHANGE MEMORY;

EID: 84883663220     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2013.6582084     Document Type: Conference Paper

References (9)

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3. F. Pellizzer et al., "A 90nm Phase-Change Memory Technology for Stand-Alone Non-Volatile Memory Applications", Symp. on VLSI Tech., pag. 122, 2006.
4. G. Servalli, "A 45nm Generation Phase Change Memory Technology", IEDM Tech. Dig., 2009
5. C. Villa et al., "A 45nm 1Gbit 1. 8V PCM for wireless end embedded applications", ISSCC 2010
6. B. Gleixner et al., "Reliability Characterization of Phase Change Memory", EPCOS 2009, Aachen, http//www. epcos. org
7. A. Redaelli et al., "Impact of the current density increase on reliablity in caled BJT-selected PCM for high density application", IRPS 2010
8. R. Haas et al., EPCOS, p. 158 (2011
9. T. Shintami et al., EPCOS, p. 110 (2011)