Direct and converse magnetoelectric effects in Metglas/LiNbO 3/Metglas trilayers

Journal of Applied Physics

Volumn 114, Issue 4, 2013, Pages

  Timopheev, A A ^a   Vidal, J V ^a   Kholkin, A L ^b   Sobolev, N A ^a  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PERMITTIVITIES; ELECTROMECHANICAL RESONANCES; FREQUENCY RANGES; MAGNETOELECTRIC COMPOSITES; MAGNETOELECTRIC PROPERTIES; MAGNETOELECTRIC VOLTAGE COEFFICIENT; QUASI-STATIC REGIME; THICKNESS RATIO;

PERMITTIVITY;

MAGNETOELECTRIC EFFECTS;

EID: 84882435496     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4816400     Document Type: Article

References (49)

1. G. Srinivasan, Annu. Rev. Mater. Res. 40, 153 (2010). 10.1146/annurev-matsci-070909-104459
2. J. Ma, J. M. Hu, Z. Li, and C. W. Nan, Adv. Mater. 23, 1062 (2011). 10.1002/adma.201003636
3. C.-W. Nan, M. I. Bichurin, S. Dong, D. Viehland, and G. Srinivasan, J. Appl. Phys. 103, 031101 (2008). 10.1063/1.2836410
4. M. Fiebig, J. Phys. D: Appl. Phys. 38, R123 (2005). 10.1088/0022-3727/38/ 8/R01
5. C.-W. Nan, Phys. Rev. B 50, 6082 (1994). 10.1103/PhysRevB.50.6082
6. S. Dong, J. Zhai, J. Li, and D. Viehland, Appl. Phys. Lett. 89, 252904 (2006). 10.1063/1.2420772
7. N. X. Sun and G. Srinivasan, Spin 02, 1240004 (2012). 10.1142/S2010324712400048
8. C. A. Vaz, J. Phys.: Condens. Matter. 24, 333201 (2012). 10.1088/0953-8984/24/33/333201
9. Y. Chen, Appl. Phys. Lett. 99, 042505 (2011). 10.1063/1.3617434
10. J. Gao, Z. Wang, Y. Shen, M. Li, Y. Wang, P. Finkel, J. Li, and D. Viehland, Mater. Lett. 82, 178 (2012). 10.1016/j.matlet.2012.05.067
11. J. Gao, Y. Wang, M. Li, Y. Shen, J. Li, and D. Viehland, Mater. Lett. 85, 84 (2012). 10.1016/j.matlet.2012.06.100
12. C.-S. Park, K.-H. Cho, M. A. Arat, J. Evey, and S. Priya, J. Appl. Phys. 107, 094109 (2010). 10.1063/1.3406142
13. N. A. Pertsev and H. Kohlstedt, Nanotechnology 21, 475202 (2010). 10.1088/0957-4484/21/47/475202
14. J.-M. Hu, Z. Li, J. Wang, J. Ma, Y. H. Lin, and C. W. Nan, J. Appl. Phys. 108, 043909 (2010). 10.1063/1.3463408
15. L. Dreher, M. Weiler, M. Pernpeintner, H. Huebl, R. Gross, M. Brandt, and S. Goennenwein, Phys. Rev. B 86, 134415 (2012). 10.1103/PhysRevB.86.134415
16. T. H. Lahtinen, K. J. Franke, and S. van Dijken, Sci. Rep. 2, 258 (2012). 10.1038/srep00258
17. J. Liu, C. Jiang, and H. Xu, Sci. China, Ser. E: Technol. Sci. 55, 1319 (2012). 10.1007/s11431-012-4810-0
18. E. D. Delacheisserie, J. Magn. Magn. Mater. 25, 251 (1982); available at http://joam.inoe.ro/arhiva/pdf6-2/Hasegawa.pdf. 10.1016/0304-8853(82)90072-5
19. R. Hasegawa, J. Optoelectron. Adv. Mater. 6, 503 (2004).
20. M. Li, Y. Wang, D. Hasanyan, J. Li, and D. Viehland, Appl. Phys. Lett. 100, 132904 (2012). 10.1063/1.3698114
21. M. Li, D. Hasanyan, Y. Wang, J. Gao, J. Li, and D. Viehland, J. Phys. D: Appl. Phys. 45, 355002 (2012). 10.1088/0022-3727/45/35/355002
22. L. Y. Fetisov, Y. K. Fetisov, G. Sreenivasulu, and G. Srinivasan, J. Appl. Phys. 113, 116101 (2013). 10.1063/1.4798579
23. H. Greve, E. Woltermann, H.-J. Quenzer, B. Wagner, and E. Quandt, Appl. Phys. Lett. 96, 182501 (2010). 10.1063/1.3377908
24. G. Sreenivasulu, V. M. Petrov, L. Y. Fetisov, Y. K. Fetisov, and G. Srinivasan, Phys. Rev. B 86, 214405 (2012). 10.1103/PhysRevB.86.214405
25. S.-E. Park and T. R. Shrout, J. Appl. Phys. 82, 1804 (1997). 10.1063/1.365983
26. J. Gao, L. Shen, Y. Wang, D. Gray, J. Li, and D. Viehland, J. Appl. Phys. 109, 074507 (2011). 10.1063/1.3569629
27. Y. Wang, D. Gray, J. Gao, D. Berry, M. Li, J. Li, D. Viehland, and H. Luo, J. Alloys Compd. 519, 1 (2012). 10.1016/j.jallcom.2011.12.093
28. Y. Chen, T. Fitchorov, Z. Cai, K. S. Ziemer, C. Vittoria, and V. G. Harris, J. Phys. D: Appl. Phys. 43, 155001 (2010). 10.1088/0022-3727/43/15/ 155001
29. V. L. Mathe, A. D. Sheikh, and G. Srinivasan, J. Magn. Magn. Mater. 324, 695 (2012). 10.1016/j.jmmm.2011.08.056
30. M. Liu, Adv. Funct. Mater. 19, 1826 (2009). 10.1002/adfm.200801907
31. G. Sreenivasulu, L. Y. Fetisov, Y. K. Fetisov, and G. Srinivasan, Appl. Phys. Lett. 100, 052901 (2012). 10.1063/1.3679661
32. R. S. Weis and T. K. Gaylord, Appl. Phys. A 37, 191 (1985). 10.1007/BF00614817
33. M. Yachi and M. Ono, Proc.-IEEE Ultrason. Symp. 2, 1003 (1995).
34. W. P. Robbins and E. M. Simpson, IEEE Trans. Sonics Ultrason. 26, 658 (1979). 10.1109/T-SU.1979.31089
35. G. Matsunami, A. Kawamata, H. Hosaka, and T. Morita, Sens. Actuators, A 144, 337 (2008). 10.1016/j.sna.2008.02.006
36. V. Koeninger, Y. Matsumura, H. H. Uchida, and H. Uchida, J. Alloys Compd. 211/212, 581 (1994). 10.1016/0925-8388(94)90571-1
37. N. Obata, T. Kawahata, R. Suzuki, K. Nishimura, H. Uchida, and M. Inoue, Phys. Status Solidi A 201, 1973 (2004). 10.1002/pssa.200304681
38. W. P. Robbins and A. Young, IEEE Trans. Sonics Ultrason. 32, 423 (1985). 10.1109/T-SU.1985.31611
39. K. H. Shin and M. Inoue, J. Korean Phys. Soc. 53, 1706 (2008). 10.3938/jkps.53.1706
40. H.-Y. Kuo, A. Slinger, and K. Bhattacharya, Smart Mater. Struct. 19, 125010 (2010). 10.1088/0964-1726/19/12/125010
41. W. Tao, A. Bur, J. L. Hockel, W. Kin, C. Tien-Kan, and G. P. Carman, IEEE Magn. Lett. 2, 6000104 (2011). 10.1109/LMAG.2010.2100810
42. P. Yang, K. Zhao, Y. Yin, J. G. Wan, and J. S. Zhu, Appl. Phys. Lett. 88, 172903 (2006). 10.1063/1.2198486
43. Y. Wang and Y. J. Jiang, Opt. Mater. 23, 403 (2003). 10.1016/S0925- 3467(02)00328-2
44. A. W. Warner, J. Acoust. Soc. Am. 42, 1223 (1967). 10.1121/1.1910709
45. R. Zhang, B. Jiang, and W. Cao, J. Appl. Phys. 90, 3471 (2001). 10.1063/1.1390494
46. P. Han, W. Yan, J. Tian, X. Huang, and H. Pan, Appl. Phys. Lett. 86, 052902 (2005). 10.1063/1.1857085
47. J. Zhai, S. Dong, Z. Xing, J. Li, and D. Viehland, Appl. Phys. Lett. 89, 083507 (2006). 10.1063/1.2337996
48. D. Hasanyan, J. Gao, Y. Wang, R. Viswan, M. Li, Y. Shen, J. Li, and D. Viehland, J. Appl. Phys. 112, 013908 (2012). 10.1063/1.4732130
49. Y. Wang, D. Hasanyan, M. Li, J. Gao, J. Li, D. Viehland, and H. Luo, J. Appl. Phys. 111, 124513 (2012). 10.1063/1.4729832