A simple bilayered magnetoelectric random access memory cell based on electric-field controllable domain structure

Journal of Applied Physics

Volumn 108, Issue 4, 2010, Pages

  Hu, Jia Mian ^a   Li, Zheng ^a   Wang, Jing ^a   Ma, Jing ^a   Lin, Y H ^a   Nan, C W ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABRUPT CHANGE; DOMAIN STRUCTURE; DOMAIN-WALL SCATTERING; FERROELECTRIC LAYERS; FERROMAGNETIC FILMS; FERROMAGNETIC THIN FILMS; FILM RESISTIVITY; MEMORY APPLICATIONS; RANDOM ACCESS MEMORIES; SINGLE DOMAINS; SINGLE-DOMAIN STRUCTURE;

CRITICAL CURRENTS; CRYSTALS; ELECTRIC FIELDS; FERROELECTRICITY; FERROMAGNETIC MATERIALS; FERROMAGNETISM; RANDOM ACCESS STORAGE; SEMICONDUCTOR STORAGE;

DOMAIN WALLS;

EID: 77956334600     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3463408     Document Type: Conference Paper

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